LED Structure With Insulating Layer For Light Extraction
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Solution Overview
Problem
Light emitting diodes (LEDs) face challenges in light extraction efficiency and current spreading, which affect their reliability and performance in various applications.
Innovation Solution
The implementation of a light emitting device structure with a semiconductor layer, active layer, and insulating layer, where the insulating layer is formed over a cavity created by partially removing the light emitting structure, enhancing light extraction efficiency and current spreading by controlling current flow and reflecting light emitted from the active layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a conventional LED structure is used, then the device is simple to manufacture, but light extraction efficiency is poor
Solution Approach 1:
The LED structure is divided into multiple functional layers including a cavity structure, insulating layer, and electrode layers. The cavity is segmented to create specific light extraction paths, and the insulating layer is positioned to control current flow in specific regions, thereby improving light extraction efficiency while maintaining manufacturability through standardized layering processes
Solution Approach 2:
An insulating layer is introduced as an intermediary component between the cavity and the electrode layers. This insulating layer mediates the interaction between electrical current and light emission by controlling current spreading in specific regions, which enhances light extraction efficiency without complicating the overall manufacturing process
2Device complexity
If current flow is concentrated in a small area, then the device structure is simple, but current spreading is poor
Solution Approach 1:
The insulating layer is strategically positioned in specific regions of the cavity to create localized current spreading zones. This local modification of current flow paths improves overall current spreading without requiring complex device-wide restructuring, maintaining relatively simple device architecture while achieving reliable current distribution
Solution Approach 2:
The insulating layer extends in the vertical dimension from the cavity toward the electrode, creating a three-dimensional current spreading pathway. This vertical extension allows current to spread through an additional spatial dimension, improving current distribution without increasing planar device complexity
3Reliability
If the insulating layer is added to improve light extraction, then light extraction efficiency improves, but device complexity increases
Solution Approach 1:
The insulating layer serves multiple functions simultaneously: it controls current spreading, enhances light extraction efficiency through refractive index differences, and provides electrical isolation. By making this single component multi-functional, the patent improves light extraction without proportionally increasing device complexity
4Reliability
If light extraction efficiency is improved through structural modifications, then light output power increases, but manufacturing precision requirements increase
Solution Approach 1:
The cavity structure and insulating layer are formed using preliminary photolithography and etching processes before final electrode deposition. By preparing the light extraction structure in advance with standard fabrication techniques, the patent achieves high light extraction efficiency without requiring ultra-precise manufacturing in subsequent steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves light extraction efficiency and current spreading, leading to increased reliability and light output power of the LEDs.
Implementation Method 1
reflecting light emitted from the active layer
Implementation Method 2
controlling current flow
Data Source
AI summary
A light emitting device includes a light emitting structure formed from an active layer located between two semiconductor layers. An insulator extends through the active layer and at least partially through the semiconductor layers, and the light emitting structure is located between a first electrode and a second electrode layer. The first electrode and insulator overlap one another and may have the same or different widths.