L-Shaped Interconnects for LED Thermal Management
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Solution Overview
Problem
There is a need for semiconductor light emitting devices that are downsized for applications in illumination and display apparatuses, requiring increased suitability for mass production and reduced costs, while maintaining effective light emission and thermal management.
Innovation Solution
A light emitting device design featuring a semiconductor layer with a p-side and n-side electrode configuration, including interconnect layers with L-shaped cross-sections and insulating layers for improved current distribution and heat dissipation, along with a method for manufacturing that involves selective etching and electroplating to form the interconnect structures, allowing for efficient light emission and mechanical reinforcement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the semiconductor light emitting device is downsized for illumination and display applications, then the device size is reduced, but the heat dissipation efficiency deteriorates
Solution Approach 1:
The patent introduces a third dimension by forming interconnect layers that extend vertically from the substrate surface. The L-shaped interconnect structures utilize vertical space to route currents from electrode regions to emission regions, allowing heat and current management in the vertical dimension rather than only in the planar dimension, thus improving heat dissipation efficiency in downsized devices
Solution Approach 2:
The patent segments the interconnect structure into multiple distinct layers: first insulating layer, first interconnect layer, second insulating layer, and second interconnect layer. This segmentation allows independent optimization of each layer's function, with specific layers dedicated to current distribution, insulation, and heat management, thereby improving overall thermal performance in compact devices
2Ease of operation
If complex interconnect structures with multiple layers are introduced to improve current distribution, then the current distribution efficiency is improved, but the device complexity increases
Solution Approach 1:
The patent introduces insulating layers as intermediary elements between conductive interconnect layers. These insulating layers mediate between the first and second interconnect layers, preventing electrical shorting while allowing thermal coupling. This intermediary structure enables complex current distribution paths without proportionally increasing overall device complexity
Solution Approach 2:
The interconnect layers serve multiple functions simultaneously: they distribute current to emission regions, provide thermal pathways for heat dissipation, and maintain structural integrity. This multi-functionality reduces the need for separate dedicated structures, thereby improving current distribution efficiency without proportionally increasing device complexity
3Temperature
If L-shaped interconnect layers are formed to improve heat dissipation, then the thermal management is improved, but the manufacturing process complexity increases
Solution Approach 1:
The patent forms the L-shaped interconnect structures during the manufacturing process by preliminary patterning and deposition steps. The interconnect layers are formed with their final L-shaped geometry through planned deposition sequences and patterning steps, rather than requiring complex post-manufacturing assembly or modification, thus improving thermal management without excessively increasing manufacturing complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design enhances light output, thermal conductivity, and mechanical strength, enabling efficient heat dissipation and improved manufacturing productivity while reducing production costs.
Implementation Method 1
The p-side interconnect layer includes a first p-side interconnect layer electrically connected to the p-side electrode through the first via, and a second p-side interconnect layer electrically connected to the first p-side interconnect layer
Implementation Method 2
a method for manufacturing that involves selective etching and electroplating to form the interconnect structures
Data Source
Figure 1A~1C
Figure 2
Figure 3A~3B
AI summary
According to one embodiment, a light emitting device (10) includes a semiconductor layer (15), a p-side electrode (16), an n-side electrode (17), a first insulating layer (18), a p-side interconnect layer (21), an n-side interconnect layer (22), and a second insulating layer (25). The portion of the second p-side interconnect layer (21) has the L- shaped cross section being configured to include a p-side external terminal (23a) exposed from the first insulating layer (18) and the second insulating layer (25) at a third surface (30) having a plane orientation different from the first surface (15a) and the second surface. The portion of the second n-side interconnect layer has the L- shaped cross section being configured to include an n-side external terminal (24a) exposed from the first insulating layer (18) and the second insulating layer (25) at the third surface (30).