LED Light-Emitting Device Lateral Electrode Connection
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Solution Overview
Problem
In LED light source modules, the conductive layer arrangement across active layers and doped semiconductor layers can lead to breakage due to height differences, resulting in open circuits and reduced yield and reliability.
Innovation Solution
A light-emitting device design featuring a plurality of light-emitting units with a light-emitting stacking layer, electrode layers, and an insulation layer, where the electrode layers are connected through inner openings and trenches to ensure stable electrical connectivity without crossing the active layers, thereby preventing open circuits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the conductive layer is arranged across active layers and doped semiconductor layers in a direction perpendicular to the substrate, then electrical connectivity between adjacent LED chips is achieved, but the conductive layer may breakage due to height difference leading to open circuits
Solution Approach 1:
The patent transitions from a vertical (perpendicular to substrate) conductive layer arrangement to a lateral (parallel to substrate) arrangement. The conductive layer is positioned in the same plane as the active layers rather than crossing through them vertically, eliminating the height difference issue while maintaining electrical connectivity between adjacent LED chips through side-wall contact.
2Productivity
If the conductive layer is arranged perpendicular to the substrate to connect adjacent LED chips, then electrical connectivity is established, but breakage occurs due to height difference reducing yield
Solution Approach 1:
The conductive layer is repositioned from a vertical crossing arrangement to a lateral arrangement at the same elevation as the active layers. This dimensional change eliminates the height difference that causes breakage, thereby reducing open circuit risk and improving manufacturing yield without compromising electrical connectivity.
Solution Approach 2:
The patent introduces an insulation layer as an intermediary structure that manages the spatial relationship between the conductive layer and the active layers. This insulation layer allows the conductive layer to be positioned laterally while maintaining proper electrical isolation and connection, preventing direct contact that would cause short circuits or breakage.
3Reliability
If the conductive layer crosses active layers and doped semiconductor layers, then electrical connection is achieved, but the arrangement leads to open circuits reducing reliability
Solution Approach 1:
The conductive layer is relocated from a vertical crossing path through multiple layers to a lateral position at the same level as the active layers. This simplifies the fabrication process by eliminating the need to precisely align and connect through height variations, making the manufacturing easier while improving reliability.
Solution Approach 2:
The insulation layer serves as a mediator that facilitates the lateral arrangement of the conductive layer. It provides a stable platform for the conductive layer while maintaining proper electrical isolation, simplifying the manufacturing process and reducing the risk of open circuits.
Data Source
AI summary
A light-emitting device includes light-emitting units and an electrical connection layer. Each light-emitting unit includes a light-emitting stacking layer, a first electrode layer, an insulation layer, and a second electrode layer. The light-emitting stacking layer includes first and second-type doped semiconductor layers, an active layer, and a first inner opening passing through the second-type doped semiconductor layer and the active layer. The second electrode layer is close to and is electrically connected to the second-type doped semiconductor layer. The insulation layer is disposed on a sidewall of the first inner opening and forms a second inner opening. The first electrode layer is disposed in the second inner opening and electrically connected to the first-type doped semiconductor layer. The electrical connection layer is electrically connected to the first electrode layer of one of two adjacent light-emitting units and the second electrode layer of the other adjacent light-emitting unit.