LED Mesa Dimple Structure for Mini RGB Flip-Chip Reliability
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Solution Overview
Problem
Mini RGB flip chips face challenges with weak antistatic ability and low light emitting brightness, which are insufficient to meet current usage requirements.
Innovation Solution
A light emitting diode (LED) design featuring a semiconductor stacked layer with a mesa and dimple structure, along with an insulation structure having specific sloped sidewalls, to enhance antistatic and light emitting performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If mini RGB flip chips are used to reduce size, then volume is reduced, but antistatic ability and light emitting brightness deteriorate
Solution Approach 1:
The patent divides the chip structure into segmented regions with different slope angles. The mesa structure is divided into a first slope region and a second slope region, each with different slope angles relative to the horizontal direction. This segmentation allows different areas to serve different functions: the first slope region optimizes for light extraction and antistatic performance, while the second slope region optimizes for light emission, thereby resolving the contradiction between small size and antistatic ability.
Solution Approach 2:
The patent applies local quality by assigning different geometric properties to different regions of the chip. Specifically, the first slope region has a first slope angle and the second slope region has a second slope angle, where the absolute value of the first slope angle is less than the absolute value of the second slope angle. This local differentiation enables each region to contribute optimally to either antistatic performance or light emission, solving the overall performance contradiction in mini chips.
2Volume of moving object
If mini RGB flip chips are used to reduce size, then volume is reduced, but light emitting brightness deteriorates
Solution Approach 1:
The chip structure is segmented into distinct slope regions with different angular characteristics. The first slope region with a smaller absolute slope angle optimizes light extraction efficiency, while the second slope region with a larger absolute slope angle optimizes light emission directionality and intensity. This segmentation enables the mini chip to maintain high brightness despite reduced size.
Solution Approach 2:
Different local geometric qualities are assigned to different regions: the first slope region has a gentler slope to maximize light extraction, while the second slope region has a steeper slope to enhance light emission. This local optimization of geometric properties ensures high light emitting brightness in the compact mini chip structure.
3Ease of manufacture
If traditional LED structure is used, then manufacturing is simple, but antistatic performance and light emitting performance are insufficient
Solution Approach 1:
The mesa structure is segmented into two distinct slope regions with different slope angles. This segmentation can be achieved through conventional semiconductor manufacturing techniques such as selective etching or growth, maintaining ease of manufacture while significantly improving antistatic performance through the optimized geometric structure.
Solution Approach 2:
The patent introduces local quality variations in the mesa structure by creating regions with different slope angles. This can be implemented using standard semiconductor processing methods, avoiding excessive manufacturing complexity while achieving superior antistatic performance through the differentiated local geometry.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design improves antistatic performance and light emitting efficiency, thereby enhancing the reliability of the light emitting device by ensuring better coverage and performance of the pad electrodes and light emitting area.
Implementation Method 1
Light emitting diode (LED) is a semiconductor light emitting element, and is generally manufactured by gallium nitride (GaN), gallium arsenide (GaAs), gallium phosphide (GaP), and gallium arsenide phosphide (GaAsP). A core of the LED is a PN junction with light emitting characteristics.
Data Source
AI summary
A light emitting diode includes a semiconductor stacked layer, including a first semiconductor layer, a light-emitting layer and a second semiconductor layer sequentially stacked in that order, and having a mesa being an upper surface of the first semiconductor layer that is not covered by the light-emitting layer; and an insulation structure, covering the semiconductor stacked layer, and having a first opening located on the mesa and a second opening located on the second semiconductor layer. The semiconductor stacked layer defines a dimple at the mesa. The first semiconductor layer has a first sloped sidewall at the dimple, the insulation structure has a second sloped sidewall at the mesa, an angle between the first sloped sidewall and a horizontal plane is first angle, an angle between the second sloped sidewall and the horizontal plane is second angle, and the first angle is smaller than or equal to the second angle.