Light Emitting Element Manufacturing via Warping-Reduced Metal Layer Bonding
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Solution Overview
Problem
The existing methods for manufacturing light emitting elements often result in warping due to thermal expansion coefficient differences between semiconductor layers and bonding members, making subsequent processing difficult and leading to low yields, and the use of metal layers to mitigate this complicates singulation processes.
Innovation Solution
A method involving the formation of a semiconductor structure on a first substrate, bonding a second substrate with a metal layer having a smaller thermal expansion coefficient than the bonding member, and singulating the bonded body along defined lines, where the metal layer does not overlap with singulation lines, facilitating easy singulation and high yield production.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If a metal layer with smaller thermal expansion coefficient is added between semiconductor layer and support substrate, then warping of light emitting element is reduced, but singulation process becomes difficult
Solution Approach 1:
The metal layer is selectively positioned only in specific regions that do not overlap with singulation lines, creating local quality variation. This allows the metal layer to provide warping compensation in bonding areas while leaving singulation areas free for easy cutting.
Solution Approach 2:
The metal layer is divided into multiple separate regions corresponding to different light emitting element areas, with gaps between regions aligned with singulation lines. This segmentation enables easy separation during singulation while maintaining warping control in each element area.
2Strength
If bonding is performed by heating with bonding member, then support substrate bonds to semiconductor layer, but warping occurs due to thermal expansion coefficient difference
Solution Approach 1:
A metal layer with specifically smaller thermal expansion coefficient than the bonding member is introduced to compensate for thermal expansion differences during heating. This parameter change in material selection reduces warping while maintaining bonding strength.
Solution Approach 2:
The structure uses composite material layers including semiconductor layer, bonding member, and metal layer with different thermal expansion coefficients. This composite structure balances thermal stresses during heating to prevent warping while achieving strong bonding.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the manufacturing of light emitting elements with ease of singulation and high yield by reducing warping and avoiding complications in the singulation process, while ensuring good adhesion and positional accuracy.
Implementation Method 1
the difference between the thermal expansion coefficients of the semiconductor layer and the bonding member... a metal layer having a thermal expansion coefficient smaller than that of the bonding member
Implementation Method 2
bonding the second substrate above the semiconductor structure via a bonding member therebetween... the bonding of the support substrate to the semiconductor layer is performed by arranging therebetween a bonding member composed of a metal and heating them
Data Source
AI summary
A method for manufacturing a light emitting element includes: forming a semiconductor structure on a first substrate; providing a second substrate configured to be bonded above a side of the semiconductor structure opposite the first substrate; forming a metal layer above at least one of (i) a side of the semiconductor structure opposite the first substrate, and/or (ii) a side of the second substrate that is to be located closer to the semiconductor structure; bonding the second substrate above the semiconductor structure via a bonding member; removing the first substrate from the semiconductor structure to obtain a bonded body in which the second substrate is bonded above the semiconductor structure; and singulating the bonded body.