LED Light Extraction via Metallic Plasma Generating Layer
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Solution Overview
Problem
Conventional light emitting diodes (LEDs) suffer from low light extraction efficiency due to near field evanescent waves being internally reflected, leading to a significant portion of emitted light remaining within the device.
Innovation Solution
The semiconductor structure incorporates a metallic plasma generating layer and optical symmetric layers to amplify and scatter near field evanescent waves, distributing them uniformly across the structure, enhancing light extraction efficiency through a quantum well effect and optimized refractive index differences.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional light emitting diode structure is used, then device simplicity is maintained, but light extraction efficiency deteriorates due to internal reflection of near field evanescent waves
Solution Approach 1:
A metallic plasma generating layer is introduced as an intermediary component between the active layer and the external environment. This layer converts near field evanescent waves into metallic plasma, which then scatters and propagates light outward, effectively mediating the transition from trapped evanescent waves to extractable light and resolving the contradiction between structural simplicity and light extraction efficiency
Solution Approach 2:
The invention changes the physical state and optical parameters of light by converting near field evanescent waves into metallic plasma through the metallic plasma generating layer. This parameter transformation enables the light to escape from the total internal reflection regime, improving light extraction efficiency without fundamentally complicating the device structure
2Loss of energy
If metallic plasma generating layer and optical symmetric layers are added, then light extraction efficiency is improved, but device complexity increases
Solution Approach 1:
The invention employs a composite structure consisting of a metallic plasma generating layer combined with optical symmetric layers. This composite material approach allows the system to achieve enhanced light extraction efficiency through the synergistic effects of plasma generation and optical symmetry, while the layered composite structure provides a systematic way to manage the increased complexity
3Device complexity
If near field evanescent waves are internally reflected, then device structure remains simple, but luminous efficiency deteriorates due to light remaining within the device
Solution Approach 1:
The invention converts the harmful effect of internally reflected near field evanescent waves (which cause light trapping and reduced luminous efficiency) into a beneficial effect by using the metallic plasma generating layer to transform these trapped waves into metallic plasma that scatters and propagates light outward, thereby improving luminous efficiency while maintaining relatively simple device structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly increases the light extraction efficiency by converting near field evanescent waves into metallic plasma, which is then scattered and propagated, resulting in improved luminous efficiency and uniform light emission.
Implementation Method 1
enhancing light extraction efficiency through a quantum well effect
Implementation Method 2
scattered and propagated, resulting in improved luminous efficiency and uniform light emission
Data Source
AI summary
A method for making a light emitting diode is provided. In the method, a substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer are grown on the epitaxial growth surface in series. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. A metallic plasma generating layer is then formed on a surface of the source layer away from the substrate. A first optical symmetric layer is then disposed on a surface of the metallic plasma generating layer. A first electrode is applied on an exposed surface of the first semiconductor layer. A second electrode is applied to electrically connect with the second semiconductor layer.