LED Metallic Plasma Layer for Light Extraction
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Solution Overview
Problem
Conventional light emitting diodes (LEDs) suffer from low light extraction efficiency due to near field evanescent waves being internally reflected, leading to a significant portion of emitted light remaining within the device.
Innovation Solution
The semiconductor structure incorporates a metallic plasma generating layer and optical symmetric layers to amplify and scatter near field evanescent waves, increasing light extraction efficiency by uniformly distributing metallic plasma and enhancing photon production, with three-dimensional nano-structures further optimizing light extraction angles and contact areas for improved electron-hole recombination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a conventional light emitting diode structure is used, then the device is simple to manufacture, but the light extraction efficiency is low due to internal reflection of near field evanescent waves
Solution Approach 1:
The patent introduces a metallic plasma generating layer as an intermediary between the active layer and the external environment. This layer converts near field evanescent waves into propagating light waves through surface plasmon resonance, enabling efficient light extraction without complicating the overall device structure. The metallic layer acts as a mediator that transforms the harmful internally reflected waves into useful extracted light.
Solution Approach 2:
The patent changes the optical parameters of the LED structure by introducing a metallic layer with specific plasma frequency characteristics. By tuning the metallic layer's properties (material composition, thickness, plasma frequency), the system optimizes the conversion of evanescent waves to propagating waves, thereby improving light extraction efficiency while maintaining manufacturing simplicity.
2Loss of energy
If optical symmetric layers are added to amplify and scatter near field evanescent waves, then light extraction efficiency is improved, but device complexity increases
Solution Approach 1:
The patent employs optical symmetric layers with specific asymmetric positioning relative to the metallic plasma generating layer. The symmetry is designed such that the layers are equidistant from the metallic layer, creating constructive interference for light extraction while maintaining a relatively simple overall structure. This controlled asymmetry in positioning enhances light extraction without requiring complex multi-layer configurations.
3Loss of energy
If three-dimensional nano-structures are incorporated to optimize light extraction angles, then photon production and extraction are improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent transitions from planar (2D) metallic layers to three-dimensional nano-structured metallic configurations. These 3D structures create multiple light extraction pathways and angles, enhancing photon extraction efficiency by utilizing spatial dimensionality. The 3D nano-structures provide omnidirectional light extraction capabilities without requiring extremely tight manufacturing tolerances, as the geometric configuration itself provides the extraction enhancement.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly enhances light extraction efficiency by converting near field evanescent waves into emergent light, increasing the luminous efficiency of LEDs and improving the extraction of photons, thereby addressing the internal reflection issue in conventional LEDs.
Implementation Method 1
a metallic plasma generating layer and optical symmetric layers to amplify and scatter near field evanescent waves, increasing light extraction efficiency by uniformly distributing metallic plasma and enhancing photon production
Implementation Method 2
optical symmetric layers to amplify and scatter near field evanescent waves, increasing light extraction efficiency by uniformly distributing metallic plasma
Implementation Method 3
three-dimensional nano-structures further optimizing light extraction angles and contact areas for improved electron-hole recombination
Data Source
AI summary
A light emitting diode includes a substrate, a source layer, a metallic plasma generating layer, a first optical symmetric layer, a second optical symmetric layer, a first electrode, and a second electrode. The source layer includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked on a surface of the substrate in series. The first electrode is electrically connected with the first semiconductor layer. The second electrode is electrically connected with the second semiconductor layer. The metallic plasma generating layer is disposed on a surface of the source layer away from the substrate. The first optical symmetric layer is disposed on a surface of the metallic plasma generating layer away from the substrate. The second optical symmetric layer is disposed on a surface of the first optical symmetric layer away from the substrate.