LED Module Structure for Direct RGB Emission Without Converters
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing LED display technologies face challenges in manufacturing efficient LED modules with high brightness and light efficiency, often requiring complex processes and additional components like wavelength converters.
Innovation Solution
A method for manufacturing LED modules involves forming conductivity-type semiconductor base layers with specific mask patterns to grow light emitting laminates of different wavelengths simultaneously, using nitride single crystal layers with varying indium content, and removing edge regions to optimize LED cell structure and efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If wavelength converters are used to achieve different light wavelengths, then the display can show multiple colors, but the device complexity and manufacturing process become more complex
Solution Approach 1:
The patent merges multiple LED cells with different wavelengths into a single integrated structure by simultaneously growing multiple active layers with different indium contents in a single semiconductor layer. This eliminates the need for separate LED cells and wavelength converters, directly resolving the technical contradiction by achieving multi-color emission without increasing device complexity
Solution Approach 2:
The patent creates a universal semiconductor layer that can emit multiple wavelengths simultaneously by incorporating multiple active layers with different indium compositions. This single layer performs the function of multiple separate LED cells, eliminating the need for wavelength converters and simplifying the overall device structure
2Adaptability or versatility
If multiple separate LED cells are used to emit different wavelengths, then color display is achieved, but the device area and resolution are reduced
Solution Approach 1:
The patent combines multiple LED cells into a single integrated semiconductor layer by simultaneously growing multiple active layers with different indium contents. This merging approach maintains all color emission capabilities while significantly reducing the total device area, thereby improving display resolution
Solution Approach 2:
The patent implements a nested structure where multiple active layers with different indium contents are embedded within a single semiconductor layer. This nesting approach allows multiple wavelength-emitting regions to occupy the same spatial footprint, reducing overall device area while maintaining multi-color functionality
3Ease of manufacture
If edge regions are retained in LED cells, then manufacturing is simpler, but light emission efficiency is reduced due to edge effects
Solution Approach 1:
The patent extracts and removes the edge regions from the grown semiconductor layer, separating the problematic edge portions from the main light-emitting areas. This extraction eliminates edge effects that reduce light emission efficiency while maintaining the simplicity of the initial growth process
Solution Approach 2:
The patent performs edge region removal as a preliminary step before final device assembly. By removing edge regions early in the manufacturing process, the patent prevents edge effects from compromising light emission efficiency in subsequent operation, while still benefiting from the simplicity of bulk semiconductor growth
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of LED modules with high efficiency and simplified processes, achieving direct emission of blue, green, and red light without wavelength converters, resulting in a miniaturized and high-resolution display apparatus.
Implementation Method 1
The first active layer includes a first quantum well layer configured to emit light of a wavelength of 440 nm to 480 nm, the second active layer includes a second quantum well layer configured to emit light of a wavelength of 510 nm to 550 nm, and the third active layer includes a third quantum well layer configured to emit light having a wavelength of 610 nm to 650 nm
Data Source
AI summary
A method of manufacturing an LED module includes forming a first conductivity-type semiconductor base layer on a growth substrate; forming a mask pattern having first to third openings on the first conductivity-type semiconductor base layer, wherein the mask pattern the first to the third openings having different widths and arranged with a same pitch; simultaneously forming first to third light emitting laminates in the first to third openings, respectively; removing the mask pattern from the first conductivity-type semiconductor base layer; and removing an edge region of each of the first to third light emitting laminates, wherein first to third light emitting laminates include a first to third active layers configured to emit light of different wavelengths, respectively.