LED Module Plating Layers for Reliable Electrical Connections
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Solution Overview
Problem
Existing light-emitting diode (LED) packaging methods, such as Quad Flat No-leads (QFN), face challenges in achieving high reliability due to limitations in electrical connection and protection, leading to potential displacement reactions and reduced quality of electrical connections.
Innovation Solution
A light-emitting diode module design featuring a first and second conductive device with protecting layers of nickel and an insulating structure with openings for palladium and gold plating layers, enhancing protection and electrical connection reliability, along with a manufacturing method that forms protecting layers before covering the insulating structure and applying plating layers afterwards.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If QFN packaging method is used with electrical connection points on bottom surface, then high-density and small-volume packaging is achieved, but reliability of electrical connection deteriorates
Solution Approach 1:
The electrical connection interface is segmented into multiple layers: copper metal layer for conductivity, nickel protecting layer for corrosion resistance, and palladium/gold plating layers for oxidation resistance. This segmentation allows each layer to perform its specific function optimally, resolving the contradiction between compact packaging and reliable connection by creating a multi-functional stacked structure at the connection interface.
Solution Approach 2:
The protecting layers (nickel, palladium, gold) are formed on the copper metal layer before the insulating structure is disposed. This preliminary action ensures that the copper layer is already protected against displacement reactions and oxidation before final assembly, preventing reliability issues while maintaining the compact QFN packaging structure.
2Ease of manufacture
If metal layers are exposed without protecting layers, then manufacturing process is simplified, but displacement reactions occur reducing connection quality
Solution Approach 1:
The nickel protecting layer and palladium/gold plating layers are formed on the copper metal layer before the insulating structure is disposed. This preliminary action ensures that the copper layer is already protected against displacement reactions and oxidation before final assembly, preventing reliability issues while maintaining the compact QFN packaging structure.
Solution Approach 2:
The nickel layer acts as an intermediary barrier between the copper metal layer and the external environment, preventing direct contact that would cause displacement reactions. The palladium and gold plating layers serve as additional intermediary protective barriers, ensuring connection quality without complicating the overall manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a reliable electrical interface and improved connection quality by protecting the metal layers and applying plating layers strategically, resulting in enhanced reliability and performance of the light-emitting diode module.
Implementation Method 1
The first protecting layer covers the first metal layer. The second protecting layer covers the second metal layer... protecting the metal layers
Implementation Method 2
disposing a first plating layer on the first protecting layer and the second protecting layer in the first opening and the second opening
Data Source
AI summary
A light emitting diode module includes a first conductive device, a second conductive device, an insulating structure and a plating layer. The first conductive device includes a first metal layer and a first protecting layer covering the first metal layer. The second conductive device includes a second metal layer and a second protecting layer covering the second metal layer. The insulating structure covers around the first and the second conductive devices. The plating layer is disposed on the first and the second protecting layers in a first and a second openings of the insulating structure. The insulating structure covers portions of upper surfaces of the first and the second conductive devices. The plating layer covers remaining portions of the upper surfaces of the first and the second conductive devices. Lower surfaces of the first and the second conductive devices are located in the second opening.