LED N-Contact Grid Structure for Current Spreading and Heat Dissipation
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Solution Overview
Problem
Conventional LED technology faces challenges in maximizing light emission efficiency due to limitations in current spreading and thermal management, particularly in larger LED chips, which affect internal reflection and current injection.
Innovation Solution
The introduction of an n-contact structure forming a grid pattern on the n-type layer of LED chips, embedded within reflective and dielectric layers, enhances current spreading and thermal management by increasing contact between the n-type layer and the n-contact structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the LED chip size is increased to provide larger emission area, then the light output increases, but the current spreading becomes insufficient leading to poor current injection
Solution Approach 1:
The n-type layer is segmented into multiple regions with different doping concentrations (first n-type layer with higher doping, second n-type layer with lower doping), allowing differentiated current distribution across the chip area to improve current spreading
Solution Approach 2:
Different regions of the LED chip are assigned different n-type layer doping concentrations - higher doping near contact regions for current injection, lower doping in emission regions for light extraction, optimizing both current spreading and light output
2Area of stationary object
If the LED chip size is increased to provide larger emission area, then the light output increases, but the thermal management becomes insufficient
Solution Approach 1:
The chip is divided into functionally distinct regions (current injection regions with high doping, light emission regions with low doping), allowing optimized thermal pathways in each zone to manage heat distribution across the larger chip area
Solution Approach 2:
The multi-layer n-type structure acts as an intermediary between the contact and the active region, providing both electrical current distribution and thermal conduction pathways that scale effectively with chip size
3Ease of manufacture
If conventional contact structures are used in larger LED chips, then the manufacturing is simpler, but the light extraction efficiency is limited by poor current spreading
Solution Approach 1:
The n-type layer is divided into multiple layers with different doping concentrations, creating a structured approach that improves current spreading and light extraction while remaining compatible with standard semiconductor fabrication processes
Solution Approach 2:
The doping concentration parameter is varied across different regions and layers of the n-type structure, enabling optimized current distribution and light extraction efficiency without fundamentally changing the manufacturing process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves current injection and thermal spreading, leading to enhanced light extraction and overall efficiency in LED chips, especially for larger sizes.
Implementation Method 1
increased contact between the n-type layer and the n-contact structure may promote improved current spreading and/or current injection
Implementation Method 2
providing increased thermal spreading in LED chips
Implementation Method 3
Reflective surfaces may also be provided to reflect generated light so that such light may contribute to useful emission from an LED chip
Data Source
AI summary
Light-emitting diodes (LEDs), and more particularly contact structures of LED chips for improved current injection are disclosed. Exemplary LED chips include an n-contact structure that forms part of a cathode connection. N-contact structures are provided that form a grid structure that is electrically coupled at an n-type layer across the LED chip so that current is coupled to and spread along the n-type layer. N-contact structures are provided that reside along streets formed between active LED structure mesas. N-contact structures are provided that are embedded within one or more layers of an LED chip, including reflective layers and/or dielectric layers. By providing such n-contact structures along the n-type layer, increased contact between the n-type layer and the n-contact structure may promote improved current spreading and/or current injection while also providing increased thermal spreading in LED chips. Additionally, increased edge profiles of active LED structure mesas may provide increased light extraction.