LED Insulating Layer Openings for Better Light Extraction
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Solution Overview
Problem
Existing light-emitting devices face challenges in improving light extraction efficiency and production yield, while also enhancing the reliability of package apparatuses.
Innovation Solution
A light-emitting device with a semiconductor stack, including a first semiconductor layer, a second semiconductor layer, and an active layer, is designed with specific electrode pads and insulating layers. The insulating layer includes openings that expose the first semiconductor layer, with varying maximum lengths to optimize light extraction efficiency and production processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the insulating layer covers the entire semiconductor stack uniformly, then the manufacturing process is simple, but the light extraction efficiency is reduced due to total internal reflection at the planar interface
Solution Approach 1:
The patent applies curvature by forming the insulating layer with a curved upper surface instead of a planar surface. The curvature radius is specifically designed to be greater than the thickness of the semiconductor stack, creating a dome-shaped structure that eliminates total internal reflection and improves light extraction efficiency while maintaining manufacturing feasibility through spin-coating or dispensing processes
2Reliability
If the insulating layer is made thicker to improve insulation, then the electrical insulation is enhanced, but the light extraction efficiency is reduced due to increased absorption and scattering
Solution Approach 1:
The patent optimizes the thickness parameter of the insulating layer to a specific range (50-200 nm) that balances electrical insulation requirements with light extraction efficiency. This parameter optimization ensures sufficient electrical isolation between electrodes while minimizing optical absorption and scattering losses in the insulating material
3Productivity
If conventional cutting methods are used without identification patterns, then the cutting process is fast, but the production yield is reduced due to misalignment and defective cuts
Solution Approach 1:
The patent implements identification patterns (such as notches, dimples, or colored markers) on the semiconductor wafer before the cutting process. These pre-formed features serve as reference marks that enable precise alignment during dicing or sawing operations, ensuring accurate positioning and reducing defective cuts while maintaining high cutting speeds
Data Source
AI summary
A semiconductor device includes a semiconductor stack, including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad, adjacent to a first edge of the semiconductor device; a second electrode pad, adjacent to a second edge of the semiconductor device; and an insulating layer covering the semiconductor stack, including one or more first openings adjacent to the first edge and one or more second openings adjacent to the second edge, and wherein the one or more first openings and the one or more second openings expose the first semiconductor layer; wherein the one or more first openings includes a first maximum length, and the one or more second openings includes a second maximum length greater than the first maximum length.