LED Optical Cavity With Embedded Nanostructure for Forward Light Extraction
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Solution Overview
Problem
Conventional LEDs face limitations in efficiently extracting and directing light due to their structure, which can lead to reduced internal quantum efficiency and the need for bulky optics.
Innovation Solution
The light emitting active region of the semiconductor diode structure is placed within an optical cavity defined by a nanostructured layer embedded within the semiconductor diode structure on one side and a reflector on the opposite side, enhancing light extraction and directionality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional LED structure is used, then manufacturing is simpler, but light extraction efficiency is reduced
Solution Approach 1:
The patent changes the optical parameters of the LED by embedding a nanostructured layer that modifies the refractive index distribution and optical path within the device. This nanostructured layer creates specific optical cavities that enhance light extraction efficiency by controlling how light propagates and exits the LED, thereby resolving the contradiction between manufacturing simplicity and light extraction efficiency.
Solution Approach 2:
The patent employs a composite structure combining conventional semiconductor LED materials with an embedded nanostructured layer. This composite approach integrates the optical enhancement benefits of nanostructures into the existing LED architecture, improving light extraction efficiency while maintaining compatibility with conventional manufacturing processes.
2Device complexity
If conventional LED structure is used, then device structure is simpler, but directionality of emitted light is reduced
Solution Approach 1:
The embedded nanostructured layer introduces specific optical parameters and cavity configurations that control the directionality of emitted light. By adjusting the nanostructure geometry, spacing, and optical properties, the patent achieves preferential forward emission without requiring complex external optical components, thus improving directionality while maintaining relatively simple device structure.
3Productivity
If conventional LED structure is used, then internal quantum efficiency is lower, but without need for complex optical cavities
Solution Approach 1:
The patent embeds the nanostructured layer within the existing LED structure, nesting the optical cavity formation inside the semiconductor device layers. This nested approach allows the optical cavity to be integrated into the LED manufacturing process rather than added as a separate external component, thereby improving internal quantum efficiency through enhanced light management while minimizing additional structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves internal quantum efficiency, reduces the need for bulky optics, and increases emitter brightness by preferentially emitting light in a forward direction, allowing for more controlled and efficient light distribution.
Implementation Method 1
the light emitting active region of the semiconductor diode structure is located within an optical cavity defined by a nanostructured layer embedded within the semiconductor diode structure on one side of the active region and a reflector located on the opposite side of the active region from the embedded nanostructured layer
Implementation Method 2
a reflector located on the opposite side of the active region from the embedded nanostructured layer
Data Source
AI summary
This specification discloses LEDs in which the light emitting active region of the semiconductor diode structure is located within an optical cavity defined by a nanostructured layer embedded within the semiconductor diode structure on one side of the active region and a reflector located on the opposite side of the active region from the embedded nanostructured layer. The reflector may, for example, be a conventional specular reflector disposed on or adjacent to a surface of the semiconductor diode structure. Alternatively, the reflector may or comprise a nanostructured layer. The reflector may comprise a nanostructured layer and a specular reflector, with the nanostructured layer disposed adjacent to the specular reflector between the specular reflector and the active region.