LED P-Type Doping Layout Using Oxygen Activation and Passivation
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Solution Overview
Problem
Conventional thermal annealing methods for activating magnesium ions in p-type semiconductor layers have low efficiency and can damage materials, making it difficult to achieve effective doping, which affects the quantum efficiency and lifespan of light-emitting diodes.
Innovation Solution
The use of oxygen atom doping in a p-type ion doping layer with an activation region and a passivation region, where oxygen ion implantation replaces hydrogen, improving activation efficiency and reducing current leakage without high-temperature annealing, thereby simplifying the manufacturing process and enhancing light extraction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional thermal annealing is used to activate Mg ions, then activation can be achieved, but activation efficiency is low and semiconductor materials may be damaged
Solution Approach 1:
The patent changes the fundamental parameter of activation method from thermal annealing to oxygen plasma treatment. This parameter change enables effective Mg ion activation at room temperature, avoiding the high temperature damage while achieving high activation efficiency. The oxygen plasma introduces oxygen atoms that form Mg-O complexes, fundamentally altering the activation mechanism.
Solution Approach 2:
The patent replaces the thermal field (heat-based) activation system with a plasma field (oxygen atom-based) activation system. This substitution eliminates the need for high temperature thermal annealing while achieving effective Mg ion activation through oxygen plasma treatment, thus avoiding material damage from high temperature.
2Reliability
If excessive Mg is doped to improve activation, then activation efficiency may improve, but material quality deteriorates leading to reduced quantum efficiency and reliability
Solution Approach 1:
The patent introduces oxygen atoms as an intermediary substance that mediates between Mg ions and the semiconductor lattice. The oxygen atoms form Mg-O complexes that enable effective activation without requiring excessive Mg doping. This intermediary mechanism allows precise control of activation while maintaining material quality, as oxygen can be precisely controlled through plasma parameters.
Solution Approach 2:
The patent changes the activation mechanism from direct thermal energy activation to oxygen-mediated chemical activation. This parameter change allows precise control of activation efficiency through oxygen plasma dosage without the need for excessive Mg doping, thereby maintaining material quality and quantum efficiency.
3Reliability
If high temperature annealing is performed to activate ions, then activation can be achieved, but the manufacturing process becomes complex and energy-consuming
Solution Approach 1:
The patent replaces the complex high-temperature thermal annealing process with a simpler oxygen plasma treatment process. The plasma treatment can be performed at room temperature and integrates well with existing semiconductor manufacturing equipment, significantly simplifying the manufacturing process while maintaining high activation efficiency.
Solution Approach 2:
The oxygen plasma treatment process is self-limiting and can be precisely controlled through plasma parameters (power, time, gas flow). The process automatically achieves optimal activation without requiring complex temperature control systems or multiple processing steps, thereby simplifying the manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the activation efficiency of p-type ions, improves uniformity of luminous exitance, and increases the internal quantum efficiency of light-emitting diodes by reducing current crosstalk and carrier recombination, while avoiding material damage and simplifying the manufacturing process.
Implementation Method 1
forming, by implanting ionized oxygen-containing gas into the p-type ion doping layer under the window, an oxygen-doped activation region
Data Source
AI summary
Disclosed are a semiconductor device and a manufacturing method therefor. The semiconductor device includes an n-type layer, a multiple quantum well layer, and a p-type ion doping layer which are disposed in sequence. The p-type ion doping layer includes an activation region and a passivation region, and the activation region is an oxygen doping region. By selectively activating the p-type ion doping layer, a passivation region at an edge of a light-emitting unit and a passivation region under the first electrode are formed, so that uniformity of luminous exitance of a device may be improved, and current crosstalk in the p-type layer may be avoided without etching and filling insulating medium or cutting isolation channels between the light-emitting units, thereby simplifying a manufacturing process of the device, and achieving a more uniform luminous exitance and higher light extraction rate of the semiconductor device.