Light Emitting Device Ohmic Contact Oxygen Plasma Treatment
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Solution Overview
Problem
Current light emitting devices face challenges in enhancing ohmic characteristics, which affect their performance and efficiency.
Innovation Solution
A light emitting device structure is developed with a n-type semiconductor layer and a p-type semiconductor layer, where the contact area between the n-type semiconductor layer and the first ohmic layer is plasma-treated in an oxygen atmosphere to include 5% or more oxygen, and the first ohmic layer is formed with materials like W and V, with a thickness of 0.5 nanometers to 3.0 micrometers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional contact structures are used between n-type semiconductor layer and ohmic layer, then manufacturing is simpler, but ohmic characteristic is insufficient
Solution Approach 1:
The contact area of the n-type semiconductor layer is plasma-treated in advance before forming the ohmic layer. This preliminary plasma treatment modifies the surface properties of the semiconductor layer, creating favorable conditions for subsequent ohmic contact formation and improving electrical characteristics without adding complex structural elements
Solution Approach 2:
The plasma treatment process changes the physical and chemical parameters of the contact area surface, including surface energy, roughness, and composition. These parameter changes enable better interface properties between the semiconductor layer and ohmic layer, achieving improved ohmic characteristic through parameter modification rather than structural complexity
2Reliability
If plasma treatment is applied to the contact area, then ohmic characteristic is enhanced, but manufacturing process becomes more complex
Solution Approach 1:
Plasma treatment is performed in an inert or controlled atmosphere environment, which allows for precise control of the treatment process while preventing contamination. This approach enhances ohmic characteristic through controlled surface modification while maintaining relatively simple manufacturing conditions compared to other advanced treatment methods
3Stability of the object's composition
If oxygen is introduced into the contact area through plasma treatment, then thermal stability is improved, but manufacturing precision requirements increase
Solution Approach 1:
The plasma treatment process introduces oxygen into the contact area, changing the compositional parameters of the semiconductor surface. This oxygen incorporation improves thermal stability by forming stable oxide phases or modifying the electronic structure. The process achieves this through controlled parameter changes during plasma exposure rather than requiring extremely precise post-treatment adjustments
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the ohmic characteristic of the light emitting device, allowing for a higher current flow at a lower operation voltage and improved thermal stability.
Implementation Method 1
the contact area between the n-type semiconductor layer and the first ohmic layer comprises oxygen at 5% or more of an atomic ratio produced by plasma-treating the contact area of the n-type semiconductor layer in an oxygen atmosphere
Data Source
Figure 1a~1c
Figure 1d~1e
Figure 1f~1g
AI summary
A light emitting device includes a light emitting structure comprising a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; a first ohmic layer and a first electrode provided on the first conductivity type semiconductor layer; and a second electrode provided on the second conductivity type semiconductor layer, wherein a contact area between the first conductivity type semiconductor layer and the first ohmic layer comprises oxygen at 5% or more of an atomic ratio or nitrogen at 50% or more of an atomic ratio.