Light Emitting Device Package with Coplanar Metal Support Layer
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Solution Overview
Problem
Display devices using semiconductor LEDs face issues with light leakage due to the structure of the light emitting device package, where light emitted by the active layer can escape through the insulating layer without being converted, leading to inefficient light utilization and potential defects in display panels.
Innovation Solution
A light emitting device package is designed with a metal support layer covering the edge of the insulating layer and having a lateral surface coplanar with the substrate, preventing light leakage by reflecting and absorbing light emitted by the active layer, and including wavelength conversion units to convert light into different wavelengths, while the insulating layer is positioned between semiconductor light-emitting units and the metal support layer to isolate them.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal support layer is added to cover the edge of the insulating layer, then light leakage is reduced and external light extraction efficiency is enhanced, but device complexity increases
Solution Approach 1:
A metal support layer is introduced as an intermediary component between the insulating layer and the external environment. This metal layer serves as a mediator that reflects and blocks light that would otherwise leak through the insulating layer, thereby preventing light leakage without fundamentally altering the core LED structure.
Solution Approach 2:
The package structure employs composite materials by combining the insulating layer with a metal support layer. This composite structure leverages the electrical insulation properties of the insulating material and the light-blocking properties of the metal layer, achieving both electrical isolation and optical control functions.
2Manufacturing precision
If the lateral surface of the metal support layer is made coplanar with the substrate, then manufacturing precision is improved and light leakage is reduced, but device complexity increases
Solution Approach 1:
The metal support layer is designed with a specific local geometric property: its lateral surface is made coplanar with the substrate surface. This localized geometric configuration addresses light leakage at the critical interface region without requiring complex modifications throughout the entire device structure.
3Use of energy by moving object
If wavelength conversion units are disposed inside the light-emitting windows, then light utilization efficiency is improved, but device complexity increases
Solution Approach 1:
The wavelength conversion units are merged with the light-emitting structure by positioning them inside the light-emitting windows. This integration combines the light emission function and wavelength conversion function into a unified structure, improving light utilization efficiency while minimizing additional structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces light leakage, enhances external light extraction efficiency, and prevents color mixing between adjacent light-emitting units, resulting in improved display performance and reduced defects in display panels.
Implementation Method 1
each wavelength conversion unit configured to convert a wavelength of light, emitted by a respective one of the plurality of semiconductor light emitting units, into a different wavelength of light
Implementation Method 2
preventing light leakage by reflecting and absorbing light emitted by the active layer
Implementation Method 3
preventing light leakage by reflecting and absorbing light emitted by the active layer
Data Source
AI summary
A light emitting device package includes a substrate for growth having a plurality of light-emitting windows, a plurality of semiconductor light-emitting units corresponding to the plurality of light-emitting windows, each semiconductor light-emitting unit having a first surface contacting the substrate for growth and a second surface opposite the first surface, and each semiconductor light-emitting unit having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked on each other, a plurality of wavelength conversion units respectively disposed inside the plurality of light-emitting windows, each wavelength conversion unit is configured to provide light having a wavelength different from light emitted by the respective semiconductor light-emitting unit, a metal support layer disposed on at least one surface of each of the plurality of semiconductor light-emitting units and having a lateral surface coplanar with a lateral surface of the substrate for growth, and an insulating layer disposed between each of the plurality of semiconductor light-emitting units and a respective metal support layer.