LED Current-Blocking Pattern Layout for Uniform Current Flow
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Solution Overview
Problem
Conventional light emitting diodes (LEDs) face issues with current crowding near electrodes, leading to uneven current distribution and reduced luminous efficiency, which can result in short-circuiting due to over-etching during the formation of current blocking patterned structures.
Innovation Solution
The design incorporates a light emitting device with a substrate, semiconductor stack, and two current blocking patterned structures separated from each other, where one structure overlaps with an electrode and the other does not, ensuring electrical insulation and preventing short-circuiting by maintaining the integrity of the current blocking patterned structures during the dicing separation process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If current blocking patterned structures are formed in conventional LEDs, then current distribution becomes more even, but short-circuiting may occur due to over-etching
Solution Approach 1:
The current blocking structure is divided into multiple segments: a first current blocking patterned structure and a second current blocking patterned structure, with the transparent conductive layer also segmented into corresponding regions. This segmentation allows different areas to have different functions - some areas block current while others maintain electrical connection, preventing short-circuits while achieving even current distribution.
Solution Approach 2:
Different regions of the transparent conductive layer are assigned different properties: regions overlapping with the first current blocking patterned structure maintain electrical connection (higher transparency/conductivity), while regions overlapping with the second current blocking patterned structure block current (lower transparency/conductivity). This local differentiation resolves the contradiction between current blocking and short-circuit prevention.
2Loss of energy
If transparent conductive layer is used to improve current distribution, then luminous efficiency increases, but current crowding near electrodes persists
Solution Approach 1:
The transparent conductive layer is differentiated into regions with different electrical and optical properties. Regions near electrodes maintain high transparency for good electrical connection, while regions in the center overlapping with current blocking structures have modified properties to prevent current crowding. This local quality variation allows the system to achieve both high luminous efficiency and uniform current distribution.
Solution Approach 2:
The device is segmented into functional zones: electrode regions with high conductivity for electrical connection, current blocking regions with modified transparency for current distribution control, and active emission regions. This segmentation allows each zone to optimize its function without compromising overall performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively prevents short-circuiting and maintains even current distribution, enhancing the electrical insulation and luminous efficiency of the LEDs by ensuring the current blocking patterned structures remain intact during the dicing separation process.
Implementation Method 1
current blocking patterned structure to make the current distribution more even
Implementation Method 2
anode and a cathode, respectively. The anode is electrically connected to the first semiconductor layer and the cathode is electrically connected to the second semiconductor layer
Implementation Method 3
Holes from the p-type semiconductor layer and electrons from the n-type semiconductor layer are combined to generate photons, thereby emitting light
Data Source
AI summary
A light-emitting device, includes a substrate; a semiconductor stack formed on the substrate; a first current blocking patterned structure and a second current blocking patterned structure formed on the semiconductor stack and separated from each other; and a plurality of electrodes formed on the semiconductor stack and electrically connected to the semiconductor stack; wherein the first current blocking patterned structure is overlapped with one of the plurality of electrodes and the second current blocking patterned structure is not overlapped with the plurality of electrodes.