Semiconductor LED Pillar Cladding for Light Emission Area

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Solution Overview

Problem

Semiconductor light emitting diodes (LEDs) face challenges in securing a sufficient effective light emitting area, leading to increased light loss.

Innovation Solution

The formation of a cladding with a pillar part and a pillar support part, along with a conformally formed active layer that includes quantum well and barrier layers, enhances the light emitting area.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If a conventional planar active layer structure is used, then the manufacturing process is simple, but the effective light emitting area is insufficient leading to increased light loss

Engineering Contradiction:
Improveeffective light emitting areaVSAvoidcladding structure complexity
Core Design Contradiction:
Area of stationary objectVSDevice complexity

Solution Approach 1:

The patent transitions from a planar active layer to a three-dimensional structure by forming the active layer conformally over pillar structures. This vertical dimensionality increase allows the active layer to wrap around pillars, significantly expanding the effective light emitting area without increasing the planar footprint, thereby resolving the contradiction between area expansion and structural complexity.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The cladding structure is segmented into distinct functional regions: a pillar support part providing mechanical foundation and an active layer part conformally covering the pillars. This segmentation allows each region to be optimized independently - the support part for structural integrity and the active part for light emission - while collectively increasing the effective emitting area.

Inventive Principle:
Principle #1Segmentation

2Area of stationary object

If the active layer is conformally formed over pillar structures, then the light emitting area increases, but the manufacturing precision requirements increase

Engineering Contradiction:
Improveeffective light emitting areaVSAvoidconformal layer formation precision
Core Design Contradiction:
Area of stationary objectVSManufacturing precision

Solution Approach 1:

The pillar support structures are formed in advance before the conformal active layer deposition. This preliminary action creates a predefined template that guides the subsequent conformal layer formation, ensuring that the active layer uniformly covers the pillar structures with controlled thickness and morphology, thereby managing manufacturing precision requirements.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The pillar support structures serve as an intermediary element between the substrate and the conformal active layer. These supports provide a controlled geometric foundation that facilitates uniform conformal deposition, acting as a mediator that translates the deposition process into consistent, high-precision layer formation over complex three-dimensional surfaces.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS9343625B2Semiconductor light emitting diode and method for manufacturing the same
Publication Date: 2016.05.17 CHIP TECHNOLOGY CO LTD
  • US9343625B2 patent drawing
  • US9343625B2 patent drawing
  • US9343625B2 patent drawing

AI summary

A semiconductor light emitting diode is provided. The semiconductor light emitting diode comprises a metal electrode; an n-type cladding over the metal electrode, the n-type cladding comprising a pillar support part formed of an n-type semiconductor material, and a pillar part having a plurality of pillars formed of an n-type semiconductor material over the pillar support part; an active part conformally formed over the pillar part so as to enclose the pillar part and over the pillar support part between the pillar parts, the active part having a quantum well layer and a barrier layer stacked alternately; a p-type cladding conformally formed of a p-type semiconductor material over the active part; and a transparent electrode formed over the p-type cladding.