LED Pixel Cavity Profiles for Stress-Based Wavelength Tuning
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Solution Overview
Problem
Current semiconductor manufacturing processes struggle to maintain high display resolution and performance as pixel sizes decrease, leading to increased manufacturing costs and inefficiencies.
Innovation Solution
The method involves forming light emitting diodes (LEDs) by creating a cavity on a substrate with a specific profile to control stress and electrical fields, using passivation and optical layers to enhance lumen output and adjust emitted light wavelength, and employing atomic layer deposition or chemical vapor deposition processes for emitter pixel structure formation, allowing for improved carrier mobility and recombination efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If pixel sizes are reduced to increase display resolution, then display resolution is improved, but manufacturing capability deteriorates
Solution Approach 1:
The invention divides the LED structure into discrete cavity units formed in an array on the substrate. Each cavity independently houses an emitter pixel structure, allowing parallel fabrication of multiple pixels simultaneously. This segmentation enables standard manufacturing processes to produce high-resolution displays by fabricating many small pixel cavities in parallel rather than attempting to manufacture fewer larger pixels sequentially.
Solution Approach 2:
The invention changes the geometric parameters of the cavity structure, specifically forming cavities with controlled depth and width ratios. By optimizing the cavity aspect ratio and dimensions, the patent enables sub-100 micrometer pixel sizes while maintaining manufacturability through standard semiconductor fabrication processes. The cavity profile parameters are specifically tuned to control stress and enable precise wavelength tuning.
2Measurement precision
If pixel sizes are reduced to increase display resolution, then display resolution is improved, but manufacturing cost increases
Solution Approach 1:
The cavity structure serves multiple functions simultaneously: it provides mechanical support for the emitter pixel, controls stress to tune emission wavelength, defines the optical mode confinement, and enables parallel fabrication. This multi-functionality eliminates the need for separate components or processes, reducing manufacturing complexity and cost while achieving high resolution.
Solution Approach 2:
The invention merges the emitter pixel structure formation with the cavity formation process. The emitter pixel is grown or deposited directly within the pre-formed cavity using standard epitaxial or deposition processes, combining what would traditionally be separate fabrication steps into a single integrated process flow, thereby reducing manufacturing cost.
3Measurement precision
If cavity profile is used to control stress and adjust emitted light wavelength, then wavelength tuning precision is improved, but device complexity increases
Solution Approach 1:
The invention uses cavity profile parameters (depth, width, aspect ratio) as tuning knobs to control stress distribution within the emitter pixel structure. By adjusting these geometric parameters during fabrication, the emission wavelength can be precisely tuned without requiring additional active control mechanisms or complex post-processing steps.
Solution Approach 2:
The cavity profile is specifically designed with localized geometric features that create controlled stress fields in specific regions of the emitter pixel. This local stress control enables wavelength tuning while maintaining the overall simplicity of the device structure, as only the cavity geometry needs to be modified rather than the entire LED structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach increases manufacturing throughput, reduces costs, and enhances LED performance by simplifying the fabrication process, addressing issues like lattice mismatch and wafer bowing, while enabling precise adjustment of emitted light wavelength.
Implementation Method 1
altering an electrical field or a work-function within the emitter pixel structure to increase carrier mobility and recombination efficiency
Implementation Method 2
forming at least one optical layer in the cavity on at least a portion of one of the at least one passivation layer, wherein the at least one optical layer is configured to increase a lumen output of the emitter pixel structure
Implementation Method 3
the at least one optical layer includes a distributed Bragg reflector (DBR) mirror layer
Implementation Method 4
the cavity profile is configured to control stress on the emitter pixel structure by altering an electrical field or a work-function within the emitter pixel structure to increase carrier mobility and recombination efficiency and to adjust an emitted light wavelength of the emitter pixel structure
Data Source
AI summary
Methods for forming light emitting diodes (LEDs) that leverage cavity profiles and induced stresses to alter emitted wavelengths of the LEDs. In some embodiments, the method includes forming a cavity on a substrate where the cavity has a cavity profile that is configured to accept an emitter pixel structure for an LED, forming at least one passivation layer in the cavity, and forming at least one optical layer in the cavity on at least a portion of one of the at least one passivation layer. The at least one optical layer is configured to increase a lumen output of the emitter pixel structure. The method further includes forming the emitter pixel structure in the cavity on the at least one optical layer of the emitter pixel structure where the cavity profile is configured to adjust an emitted light wavelength of the emitter pixel structure.