Light Emitting Device Potential Barrier Layer ESD Tolerance
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Solution Overview
Problem
Nitride-based light emitting devices lack electrostatic discharge (ESD) tolerance of -2KV, requiring the addition of a Zener diode which reduces brightness and increases manufacturing costs due to its absorption of light and influence on the light emitting device's package design.
Innovation Solution
Incorporating a potential barrier layer with a high concentration of InN within the active layer of the light emitting device to delay and disperse ESD, thereby eliminating the need for a separate ESD device in the package and minimizing brightness reduction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a Zener diode is added to the light emitting device package to provide ESD tolerance, then ESD tolerance is improved, but brightness is reduced due to light absorption by the Zener diode
Solution Approach 1:
The patent merges the ESD protection function with the existing active layer structure by forming a potential barrier layer within the active layer itself. This integration eliminates the need for a separate Zener diode component, thereby maintaining brightness while providing ESD tolerance through the built-in potential barrier that redirects ESD current away from the light-emitting quantum well region.
2Reliability
If a Zener diode is added to the light emitting device package to provide ESD tolerance, then ESD tolerance is improved, but manufacturing costs increase due to additional components
Solution Approach 1:
The ESD protection function is merged into the active layer structure through the formation of a potential barrier layer during the same semiconductor fabrication process. This eliminates the need for separate Zener diode components and their associated packaging, assembly steps, and additional materials, thereby reducing manufacturing costs while maintaining ESD tolerance.
3Reliability
If a Zener diode is added to the light emitting device package to provide ESD tolerance, then ESD tolerance is improved, but device complexity increases due to additional components
Solution Approach 1:
The patent merges the ESD protection function into the active layer structure by forming a potential barrier layer within the existing semiconductor layers. This integration eliminates the need for separate Zener diode components, lead connections, and additional packaging elements, thereby simplifying the overall device structure while providing ESD tolerance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides high ESD tolerance without separate ESD devices, maintaining brightness and reducing manufacturing costs by effectively dispersing ESD through the active layer, thus enhancing the light emitting device's performance and efficiency.
Implementation Method 1
ESD means electrostatic discharge of several thousands of volts or more generally generated when an electronic apparatus contacts a charged object
Data Source
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AI summary
Disclosed herein is a light emitting device. The light emitting device includes a support member and a light emitting structure on the support member (110) and including a first conductive semiconductor layer (131), a second conductive semiconductor layer (133) and an active layer (132) interposed between the first and second conductive semiconductor layers, and the active layer includes at least one quantum well layer and at least one barrier layer, at least one potential barrier layer (134) located between the first conductive semiconductor layer and a first quantum well layer, closest to the first conductive semiconductor layer, out of the at least one quantum well layer, and an undoped barrier layer (135) formed between the at least one potential barrier layer and the first quantum well layer and having a thickness different from that of the at least one barrier layer. The potential barrier layer and the undoped barrier layer spread the current of an ESD better over the active layer, thereby increasing the ESD tolerance. Without additional ESD protection needed in the package the brightness of the light emitting device is improved.