LED Protection Layer Prevents Delamination During Laser Scribing

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Solution Overview

Problem

Conventional light emitting devices face challenges in reliability and light extraction efficiency due to delamination issues and inefficient current distribution, particularly during manufacturing processes like laser scribing and chip separation.

Innovation Solution

A light emitting device structure incorporating a protection layer with a metallic material on the outer peripheral region, an adhesive layer, and a current blocking layer to enhance adhesive strength and uniform current distribution, including a reflective layer and ohmic contact layers to improve light extraction efficiency and reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional light emitting device structure is used, then the device is simple to manufacture, but delamination occurs during laser scribing and chip separation processes

Engineering Contradiction:
Improveadhesive strengthVSAvoidstructure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

A protection layer is formed on the outer peripheral region of the light emitting structure before laser scribing and chip separation processes. This preliminary protective measure prevents delamination during manufacturing, ensuring the adhesive strength is maintained throughout the fabrication process without requiring fundamental structural changes.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The protection layer is applied specifically to the outer peripheral region where delamination is most likely to occur during laser scribing and chip separation. This localized approach provides enhanced adhesive strength precisely where needed, rather than uniformly across the entire device, thus balancing reliability improvement with structural simplicity.

Inventive Principle:
Principle #3Local quality

2Reliability

If conventional current distribution structure is used, then the device structure is simple, but current distribution is non-uniform leading to reduced light extraction efficiency

Engineering Contradiction:
Improvecurrent distribution uniformityVSAvoidlayer structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

A current blocking layer is formed on the protection layer before forming the electrode structure. This preliminary current blocking structure guides and uniformizes the current distribution across the light emitting structure, ensuring uniform current flow that enhances light extraction efficiency without requiring complex electrode designs.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The current blocking layer is positioned specifically on the outer peripheral region, creating a localized current management structure. This allows uniform current distribution across the active area while maintaining structural simplicity in other regions, balancing performance improvement with manufacturing ease.

Inventive Principle:
Principle #3Local quality

3Ease of manufacture

If no protection layer is used, then the manufacturing process is simpler, but delamination occurs during laser scribing and chip separation

Engineering Contradiction:
Improvemanufacturing process simplicityVSAvoidadhesive strength
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

A thin film protection layer is applied to the outer peripheral region of the light emitting structure. This thin protective film prevents delamination during laser scribing and chip separation processes while adding minimal complexity to the manufacturing process. The thin film structure maintains ease of manufacture by being compatible with standard deposition techniques.

Inventive Principle:
Principle #30Flexible shells and thin films

4Productivity

If conventional electrode structure is used, then the device structure is simpler, but light extraction efficiency is reduced

Engineering Contradiction:
Improvelight extraction efficiencyVSAvoidelectrode structure complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The current blocking layer is formed on the protection layer before electrode formation. This preliminary current blocking structure ensures uniform current distribution that enhances light extraction efficiency. By establishing the current management structure beforehand, the electrode can be formed subsequently without requiring complex integrated designs, thus balancing productivity improvement with structural complexity.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The proposed structure improves the reliability and light emitting efficiency by preventing delamination and ensuring uniform current distribution, thereby enhancing the overall performance and longevity of the light emitting device.

Implementation Method 1

a protection layer including a first metallic material on an outer peripheral region of one of the light emitting structure and the first electrode

Methodology Applied
Scientific EffectAdhesion: Adhesive

Implementation Method 2

Light emitting diodes (LEDs) are semiconductor devices that convert electric energy into light

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Implementation Method 3

including a reflective layer and ohmic contact layers to improve light extraction efficiency

Methodology Applied
Scientific EffectReflection: Reflection

Data Source

PatentUS8866173B2Light emitting device
Publication Date: 2014.10.21 SUZHOU LEKIN SEMICON CO LTD
  • US8866173B2 patent drawing
  • US8866173B2 patent drawing
  • US8866173B2 patent drawing

AI summary

A light emitting device according to the embodiment may include a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer; an electrode on the light emitting structure; a protection layer under a peripheral region of the light emitting structure; and an electrode layer under the light emitting structure, wherein the protection layer comprises a first layer, a second layer, and a third layer, wherein the first layer comprises a first metallic material, and wherein the second layer is disposed between the first layer and the third layer, the second layer has an insulating material or a conductive material.