Insulative Protection Layer for LED High Voltage Resistance
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Solution Overview
Problem
Conventional light-emitting diodes are prone to damage from high voltage or alternating current and are susceptible to electrical static discharge during assembly, limiting their application and efficiency.
Innovation Solution
A semiconductor light-emitting device with a highly insulative protection layer is developed, which includes a diode stack structure with a protection layer on a heat dispersion substrate, allowing operation under both direct and alternating current while preventing current leakage and electrical static discharge.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional light emitting diode is used without protection layer, then the device structure is simple and manufacturing is easy, but the device is prone to damage from high voltage, alternating current, and electrical static discharge
Solution Approach 1:
An insulative protection layer is introduced as an intermediary component between the anode and the p-type GaN layer. This protection layer acts as a mediator that blocks harmful electrical signals (high voltage, alternating current, static discharge) from reaching the light-emitting active layer, while allowing the device to function normally under direct current operation. The protection layer thus shields the sensitive LED structure without fundamentally altering the core light-emitting mechanism.
Solution Approach 2:
The patent employs a composite structure combining the protection layer with the conventional LED layers. The protection layer is formed as a distinct insulative layer (which may be a different material composition than the semiconductor layers) that integrates with the anode and p-type GaN layer to create a multi-layer composite structure. This composite approach allows the device to maintain electrical functionality while gaining enhanced protection against electrical damage.
2Adaptability or versatility
If converter system is added to enable alternating current operation, then the device can be used in city electricity system, but the device complexity and cost increase
Solution Approach 1:
The protection layer is incorporated into the device structure during the manufacturing process, before the device is deployed. This preliminary integration of protective functionality eliminates the need for external converter systems or additional protective components to be added later. The protection layer is built-in from the start, allowing the device to directly handle alternating current signals without requiring external voltage conversion or protection circuitry.
3Adaptability or versatility
If protection layer is added to prevent electrical damage, then the device can operate under high voltage and alternating current, but the manufacturing process becomes more complex
Solution Approach 1:
The formation of the protection layer is merged with the existing semiconductor fabrication process steps. The protection layer is formed using standard semiconductor manufacturing techniques (such as deposition or growth processes) that are already part of the LED fabrication sequence. By combining the protection layer formation with existing process steps rather than adding entirely separate manufacturing operations, the patent minimizes the increase in manufacturing complexity while achieving the desired electrical protection and expanded operating voltage range.
Data Source
AI summary
The present disclosure is to provide an optoelectronic device. The optoelectronic device comprises a heat dispersion substrate; a first connecting layer on the heat dispersion substrate; a diode stack structure comprising a protection layer and a second connecting layer on the protection layer, wherein the protection layer is on the first connecting layer; a light-emitting structure on the diode stack structure, wherein the light-emitting structure comprises a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; and a first electrode electrically connected to the diode stack structure and the light-emitting structure.