LED Light Emitting Structure Protection Members

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

The challenge in fabricating light emitting diodes (LEDs) lies in ensuring the reliability of the nitride semiconductor region, which is prone to damage during the fabrication process due to the thin film stacking structure, requiring precise and reliable processes to maintain efficiency and yield.

Innovation Solution

A method involving the formation of a base semiconductor layer, etch concave portions, and protection members with specific spacings to prevent electrical short-circuiting and improve the reliability of the LED fabrication process, including the use of insulating materials like SiO2 and Si3N4 for protection members to safeguard the light emitting structure.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If thin films are stacked to form LED structure, then light emission efficiency is improved, but reliability deteriorates due to damage during fabrication

Engineering Contradiction:
Improvelight emission efficiencyVSAvoidreliability of nitride semiconductor region
Core Design Contradiction:
Use of energy by moving objectVSReliability

Solution Approach 1:

The patent applies preliminary action by forming protection members on the nitride semiconductor layer before completing the full LED fabrication process. These protection members are placed in advance to prevent damage during subsequent laser lift-off and chip separation processes, thus preserving the reliability of the thin film structure while maintaining the light emission efficiency gained from the stacked thin film design.

Inventive Principle:
Principle #10Preliminary action

2Productivity

If laser lift-off process is used to separate chips, then productivity is improved, but reliability deteriorates due to potential damage to nitride semiconductor layer

Engineering Contradiction:
Improvechip separation efficiencyVSAvoidintegrity of light emitting structure
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent implements beforehand cushioning by introducing protection members that act as a buffer between the laser energy and the nitride semiconductor layer during the lift-off process. These protection members absorb or distribute the laser impact, preventing direct damage to the light emitting structure while still enabling efficient chip separation, thus maintaining both productivity and reliability.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

3Reliability

If protection members are added to prevent damage, then reliability is improved, but device complexity increases

Engineering Contradiction:
Improvereliability of fabrication processVSAvoidstructure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies segmentation by dividing the protection function into specific localized regions rather than covering the entire device. The protection members are strategically placed only where needed during fabrication, such as on the nitride semiconductor layer in critical areas, reducing overall structural complexity while maintaining reliability in the most vulnerable zones.

Inventive Principle:
Principle #1Segmentation

4Reliability

If detailed processes are used to protect thin films, then reliability is improved, but manufacturing precision requirements increase

Engineering Contradiction:
Improveprotection of nitride semiconductor regionVSAvoidprecision of fabrication process
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent introduces protection members as intermediary elements that simplify the fabrication process rather than requiring increasingly precise direct manipulation of the thin films. These intermediaries provide a buffer that tolerates normal manufacturing variations, reducing the stringency of precision requirements while still protecting the nitride semiconductor region effectively.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentEP2750205B1Light emitting device
Publication Date: 2019.07.10 LG INNOTEK CO LTD
  • EP2750205B1 patent drawingFigure 1
  • EP2750205B1 patent drawingFigure 2~3
  • EP2750205B1 patent drawingFigure 4(a)~5

AI summary

Provided are a light emitting device, a method for fabricating the light emitting device, and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer, a conductive support member, and a protection member on the light emitting structure. The light emitting structure has a first width and a second width. A difference between the first width and the second width defines a stepped structure or an inclined structure. The protection member is disposed on the stepped or the inclined structure defined by the difference between the first and second widths of the light emitting structure.