LED Light Emitting Structure Protection Members
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Solution Overview
Problem
The challenge in fabricating light emitting diodes (LEDs) lies in ensuring the reliability of the nitride semiconductor region, which is prone to damage during the fabrication process due to the thin film stacking structure, requiring precise and reliable processes to maintain efficiency and yield.
Innovation Solution
A method involving the formation of a base semiconductor layer, etch concave portions, and protection members with specific spacings to prevent electrical short-circuiting and improve the reliability of the LED fabrication process, including the use of insulating materials like SiO2 and Si3N4 for protection members to safeguard the light emitting structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If thin films are stacked to form LED structure, then light emission efficiency is improved, but reliability deteriorates due to damage during fabrication
Solution Approach 1:
The patent applies preliminary action by forming protection members on the nitride semiconductor layer before completing the full LED fabrication process. These protection members are placed in advance to prevent damage during subsequent laser lift-off and chip separation processes, thus preserving the reliability of the thin film structure while maintaining the light emission efficiency gained from the stacked thin film design.
2Productivity
If laser lift-off process is used to separate chips, then productivity is improved, but reliability deteriorates due to potential damage to nitride semiconductor layer
Solution Approach 1:
The patent implements beforehand cushioning by introducing protection members that act as a buffer between the laser energy and the nitride semiconductor layer during the lift-off process. These protection members absorb or distribute the laser impact, preventing direct damage to the light emitting structure while still enabling efficient chip separation, thus maintaining both productivity and reliability.
3Reliability
If protection members are added to prevent damage, then reliability is improved, but device complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the protection function into specific localized regions rather than covering the entire device. The protection members are strategically placed only where needed during fabrication, such as on the nitride semiconductor layer in critical areas, reducing overall structural complexity while maintaining reliability in the most vulnerable zones.
4Reliability
If detailed processes are used to protect thin films, then reliability is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent introduces protection members as intermediary elements that simplify the fabrication process rather than requiring increasingly precise direct manipulation of the thin films. These intermediaries provide a buffer that tolerates normal manufacturing variations, reducing the stringency of precision requirements while still protecting the nitride semiconductor region effectively.
Data Source
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AI summary
Provided are a light emitting device, a method for fabricating the light emitting device, and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer, a conductive support member, and a protection member on the light emitting structure. The light emitting structure has a first width and a second width. A difference between the first width and the second width defines a stepped structure or an inclined structure. The protection member is disposed on the stepped or the inclined structure defined by the difference between the first and second widths of the light emitting structure.