Monolithic LED-Pumped Nanocavity Laser for On-Chip Light Output
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Solution Overview
Problem
Existing nanolasers face challenges in achieving efficient and repeatable light output, particularly in integrated nanophotonic circuits, where high optical fields are required for non-linear optics and surface-enhanced-Raman-scattering (SERS) applications.
Innovation Solution
A monolithically integrated laser structure is developed, comprising a substrate, a buffer layer, a light emitting diode (LED) as an optical pump, a photonic crystal layer, and a monolayer semiconductor nanocavity laser. The LED and nanocavity laser are formed monolithically, with the LED providing light through the photonic crystal layer to pump the nanocavity laser.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If a nanolaser is integrated into nanophotonic circuits, then the footprint is reduced and on-chip optical computing is enabled, but the light output power and efficiency are insufficient for non-linear optics and SERS applications
Solution Approach 1:
The patent merges the pump light source and laser gain medium into a single integrated nanolaser device. The quantum dot pump source is directly integrated with the photonic crystal nanocavity, eliminating the need for external pumping systems and enabling high power output in a compact footprint suitable for on-chip integration
Solution Approach 2:
The patent employs composite material structures including quantum dots embedded in a photonic crystal nanocavity. This composite approach combines the high efficiency of quantum dot light emission with the field enhancement capabilities of photonic crystal cavities, achieving both compact size and high light output power
2Reliability
If III-V materials are used for the buffer layer, then dislocation defects are reduced due to lattice mismatch, but the device complexity increases
Solution Approach 1:
The patent introduces a III-V buffer layer as an intermediary between the silicon substrate and the quantum dot active region. This buffer layer serves as a lattice-matched intermediate structure that reduces dislocation defects while maintaining overall device simplicity through monolithic integration
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances light output power and efficiency, enabling compact and powerful laser integration into integrated circuit (IC) devices for on-chip lasing applications, while minimizing dislocation defects through the use of a III-V buffer layer.
Implementation Method 1
a light emitting diode (LED) formed on the buffer layer and configured to produce visible light
Implementation Method 2
A photonic crystal layer is formed on the LED
Implementation Method 3
A monolayer semiconductor nanocavity laser is formed on the photonic crystal layer for receiving light through the photonic crystal layer from the LED
Data Source
AI summary
A method for forming a pumped laser structure includes forming a III-V buffer layer on a substrate including one of Si or Ge; forming a light emitting diode (LED) on the buffer layer configured to produce a threshold pump power; forming a photonic crystal layer on the LED and depositing a monolayer semiconductor nanocavity laser on the photonic crystal layer for receiving light through the photonic crystal layer from the LED with an optical pump power greater than the threshold pump power, wherein the LED and the laser are formed monolithically and the LED functions as an optical pump for the laser.