LED Structure with Reflective Conductive Layer on Tilted Substrate
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Solution Overview
Problem
Conventional light emitting diode structures face limitations in achieving optimal light-emitting efficiency due to the partial coverage of ohmic contact, reflective, and barrier layers, which restricts the overall light reflection and emission.
Innovation Solution
A light emitting diode structure featuring a reflective conductive structure layer composed of a transparent conductive layer, a reflective layer, and a barrier layer, sequentially disposed over the semiconductor epitaxial layer and substrate, effectively increasing reflective areas and enhancing light-emitting efficiency by covering exposed substrate portions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the ohmic contact layer, reflective layer and barrier layer only cover a part of the epitaxial structure, then the manufacturing process is simpler, but the light-emitting efficiency is insufficient
Solution Approach 1:
The patent extends the reflective conductive structure layer from only covering the epitaxial structure to also covering the exposed substrate surface, adding a new dimensional aspect to the layer coverage. This dimensional extension increases the total reflective area without complicating the manufacturing process, as the layer is deposited in a continuous manner over both surfaces.
Solution Approach 2:
The reflective conductive structure layer serves multiple functions: it provides electrical contact (ohmic contact), reflects light, and prevents material diffusion (barrier function). By making this single layer system cover both the epitaxial structure and substrate, it universally performs all three functions across the entire device area, maximizing light-emitting efficiency while maintaining manufacturing simplicity.
2Loss of energy
If the reflective layer coverage area is increased, then the light-emitting efficiency is improved, but the device complexity increases
Solution Approach 1:
The patent merges the reflective layer coverage over the epitaxial structure and the substrate into a single continuous layer system. Instead of creating separate reflective structures on different surfaces, the reflective conductive structure layer is deposited continuously, forming an integrated structure that covers both areas. This merging approach increases the effective reflective area while avoiding the complexity of multiple separate structures.
3Loss of energy
If the barrier layer extends to cover the annular tilt surface, then the light reflection is enhanced, but the manufacturing precision requirement increases
Solution Approach 1:
The barrier layer is deposited in advance to cover the annular tilt surface before subsequent processing steps. By performing the barrier layer deposition early in the manufacturing sequence, the layer is already in place to prevent material diffusion and provide a stable foundation for subsequent layers, reducing the need for high-precision alignment in later steps while still achieving enhanced light reflection.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The arrangement of the reflective conductive structure layer significantly enlarges reflective areas, thereby improving the light-emitting efficiency of the light emitting diode structure, particularly in flip-chip designs, by effectively reflecting light from both the semiconductor epitaxial layer and the exposed substrate.
Implementation Method 1
the reflective conductive structure layer is capable of effectively reflecting lights from the semiconductor epitaxial layer
Implementation Method 2
a transparent conductive layer, a reflective layer and a barrier layer disposed sequentially
Data Source
AI summary
A light emitting diode structure including a substrate, a semiconductor epitaxial structure, a first insulating layer, a first reflective layer, a second reflective layer, a second insulating layer and at least one electrode. The substrate has a tilt surface. The semiconductor epitaxial structure at least exposes the tilt surface. The first insulating layer exposes a portion of the semiconductor epitaxial structure. The first reflective layer is at least partially disposed on the portion of the semiconductor epitaxial structure and electrically connected to the semiconductor epitaxial structure. The second reflective layer is disposed on the first reflective layer and the first insulating layer, and covers at least the portion of the tilt surface. The second insulating layer is disposed on the second reflective layer. The electrode is disposed on the second reflective layer and electrically connected to the first reflective layer and the semiconductor epitaxial structure.