LED Reflective Recess Structure for Higher Light Extraction
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Solution Overview
Problem
Current semiconductor devices, such as light-emitting diodes (LEDs), face challenges in maximizing light-emitting efficiency due to total reflection at the light-emitting surface, which reduces the extraction of emitted light.
Innovation Solution
The optoelectronic semiconductor device incorporates a reflective structure with a recessed design and conductive oxide layers to redirect light emitted from the active structure, enhancing light extraction efficiency by minimizing total reflection and optimizing the geometry of the semiconductor stack and contact structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a conventional flat light-emitting surface is used, then the device structure is simple, but total reflection occurs reducing light extraction efficiency
Solution Approach 1:
The patent introduces a recessed structure that adds vertical dimensionality to the light-emitting surface. The recessed region creates multiple reflection interfaces at different depths and angles, transforming the light extraction process from a single-surface phenomenon to a multi-dimensional optical path system, thereby reducing total reflection and improving light extraction efficiency
Solution Approach 2:
The patent introduces an intermediate reflective layer within the recessed structure that acts as an optical mediator. This layer provides additional reflection interfaces that redirect trapped light toward the light-emitting surface, serving as an intermediary mechanism to overcome the total reflection problem without fundamentally changing the semiconductor material properties
2Productivity
If multiple conductive oxide layers and insulating layers are added to improve light extraction, then light emission efficiency increases, but device complexity increases
Solution Approach 1:
The conductive oxide layers serve multiple functions simultaneously: they provide electrical conductivity for current injection, act as reflective interfaces for light extraction, and serve as structural components of the recessed geometry. This multi-functionality reduces the need for separate dedicated layers for each function, thereby limiting the increase in device complexity
Solution Approach 2:
The patent merges the electrical contact function and the optical reflection function into the same conductive oxide layers. By combining these functions in a single structural element, the design avoids adding separate layers for each function, thus improving light extraction efficiency while controlling the increase in device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly increases the radiant flux and luminous intensity of the emitted light, improving the overall light-emitting efficiency of the semiconductor device.
Implementation Method 1
reflective structure with a recessed design and conductive oxide layers to redirect light emitted from the active structure, enhancing light extraction efficiency by minimizing total reflection
Implementation Method 2
the n-type semiconductor layer and p-type semiconductor layer provide electrons and holes respectively for the recombination in the active structure and further convert electrical energy into light
Data Source
AI summary
An optoelectronic semiconductor device includes a substrate, a first type semiconductor structure located on the substrate, a second type semiconductor structure located on the first type semiconductor structure, an active structure located between the first type semiconductor structure and the second type semiconductor structure, a plurality of contact portions disposed between the first type semiconductor structure and the substrate, and a first conductive oxide layer, a second conductive oxide layer, a first insulating layer and a second insulating layer. The plurality of contact portions is separated from each other, and one of them includes a semiconductor and has a side wall. The first conductive oxide layer contacts the contact portion, and the second conductive oxide layer contacts the first conductive oxide layer. The first insulating layer contacts the side wall. The second insulating layer is disposed between the first insulating layer and the second conductive oxide layer.