LED Semiconductor Structure With Selective P-Type Activation
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Solution Overview
Problem
Existing LED technologies using group III nitride semiconductor materials face challenges in improving light intensity and luminous efficiency while maintaining cost-effectiveness.
Innovation Solution
A semiconductor structure is designed with a P-type ion doped layer comprising activated and non-activated regions, where the P-type doping ions in the activated regions are activated and passivated in the non-activated regions, and a blocking layer is used to expose these regions, enhancing electric field concentration and reducing defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If the P-type ion doped layer is uniformly activated to increase light emitting area, then the light intensity increases, but non-radiative recombination increases and luminous efficiency decreases
Solution Approach 1:
The patent applies local quality by creating non-uniform activation in the P-type ion doped layer. Specifically, it forms activated regions (with high P-type doping concentration of 1×10^18 to 1×10^20 atoms/cm³) and non-activated regions (with low or zero P-type doping concentration) within the same layer. This spatial variation in doping activation allows different zones to serve different functions: activated regions provide high carrier concentration for strong light emission, while non-activated regions reduce non-radiative recombination, thereby simultaneously improving light intensity and luminous efficiency.
2Productivity
If the P-type doping concentration is increased to improve carrier concentration, then the light emitting efficiency improves, but the production cost increases
Solution Approach 1:
The patent applies segmentation by dividing the P-type ion doped layer into multiple regions with different doping concentrations. Instead of uniformly distributing P-type doping ions throughout the entire layer, the invention segments the layer into activated regions with high doping concentration and non-activated regions with low or zero doping concentration. This segmentation strategy reduces the total quantity of P-type doping ions required while maintaining high carrier concentration in the light-emitting areas, thereby improving light emitting efficiency without proportionally increasing production cost.
3Illumination intensity
If the activated region area is increased to improve light output, then the light intensity increases, but the electric field concentration decreases
Solution Approach 1:
The patent resolves this contradiction by applying local quality through spatially differentiated doping regions. The activated regions are strategically positioned and sized to provide sufficient carrier concentration for high light output, while the non-activated regions maintain the structural integrity and electric field concentration. This localized approach allows the electric field to remain concentrated in specific zones rather than being diluted across a uniformly activated large area, thus maintaining both high light output and strong electric field concentration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The structure improves luminous efficiency by concentrating the electric field and reducing non-radiative recombination, leading to increased light intensity and reduced production costs.
Implementation Method 1
P-type doping ions in the non-activated regions are passivated
Implementation Method 2
P-type doping ions in the activated region are activated
Data Source
AI summary
This application provides semiconductor structures and methods of manufacturing the same. A semiconductor structure includes: an N-type semiconductor layer, a light emitting layer, and a P-type ion doped layer that are disposed from bottom to up, wherein the P-type ion doped layer comprises an activated region and non-activated regions located on two sides of the activated region, P-type doping ions in the activated region are activated, and P-type doping ions in the non-activated region are passivated. The layout of the activated region and the non-activated regions makes an LED include: a high-efficiency light emitting region and light emitting obstacle regions located on two sides of the high-efficiency light emitting region.