LED and Image Sensor Integration via Epitaxial Growth
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Solution Overview
Problem
The integration of photodiodes and LEDs in semiconductor manufacturing is complex and costly due to low throughput and the need for multiple dopant treatments and complex redistribution layers, making it challenging to achieve high manufacturing efficiency and compatibility with CMOS workflows.
Innovation Solution
A method for integrating LEDs and image sensors involves forming cavities on a substrate with specific profiles to accommodate emitter and sensor pixel structures, using atomic layer deposition, chemical vapor deposition, or molecular beam epitaxy processes to crystallize the pixel structures, and forming redistribution layers to connect driver and readout circuits, enabling simplified manufacturing and improved performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If implantation techniques with multiple dopant treatments are used to form photodiodes, then pixel structures can be formed, but manufacturing throughput decreases and cost per unit increases
Solution Approach 1:
The patent changes the fundamental manufacturing parameters from implantation-based dopant treatments to epitaxial growth-based pixel formation. By using molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD) to grow semiconductor layers directly into pixel structures, the process eliminates the need for 30+ separate dopant implantation steps, thereby dramatically increasing throughput while maintaining manufacturing precision
Solution Approach 2:
The patent replaces the mechanical implantation process (ion implantation requiring precise positioning and multiple treatments) with a chemical vapor deposition/epitaxial growth process. This substitution allows pixel structures to be formed through controlled material deposition rather than mechanical doping, significantly reducing process complexity and improving manufacturing efficiency
2Manufacturing precision
If patterning techniques with multi-level contact formations are used for LEDs, then LED structures can be formed, but integration complexity increases and additional redistribution layers are required
Solution Approach 1:
The patent merges the LED and photodiode manufacturing processes by forming both structures using the same epitaxial growth technique in the same semiconductor fabrication line. This consolidation eliminates the need for separate patterning and multi-level contact formation processes, reducing integration complexity while maintaining structural precision
Solution Approach 2:
The patent creates a universal manufacturing process that can form both LED emitter structures and photodiode sensor structures using the same epitaxial growth methodology. This multi-functional approach allows a single process line to produce integrated LED-photodiode devices without requiring separate specialized equipment or additional redistribution layers
3Manufacturing precision
If separate manufacturing processes are used for photodiodes and LEDs, then each component can be optimized, but integration cost increases and manufacturing efficiency decreases
Solution Approach 1:
The patent combines separate photodiode and LED manufacturing processes into a unified epitaxial growth process. By forming both component types in the same semiconductor fabrication line using identical material deposition techniques, the patent achieves component optimization while simultaneously reducing integration costs and improving manufacturing efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach increases manufacturing throughput, reduces costs, and allows for superior performance and compatibility with CMOS workflows, enabling integration in emerging markets like under-display cameras and augmented reality devices without optical interference.
Implementation Method 1
forming the at least one emitter pixel structure using an atomic layer deposition (ALD) process, a chemical vapor deposition (CVD) process, or a molecular beam epitaxy (MBE) process and crystallizing the at least one emitter pixel structure
Implementation Method 2
forming the at least one emitter pixel structure using an atomic layer deposition (ALD) process, a chemical vapor deposition (CVD) process, or a molecular beam epitaxy (MBE) process and crystallizing the at least one emitter pixel structure
Implementation Method 3
forming the at least one emitter pixel structure using an atomic layer deposition (ALD) process, a chemical vapor deposition (CVD) process, or a molecular beam epitaxy (MBE) process and crystallizing the at least one emitter pixel structure
Implementation Method 4
forming the at least one emitter pixel structure using an atomic layer deposition (ALD) process, a chemical vapor deposition (CVD) process, or a molecular beam epitaxy (MBE) process and crystallizing the at least one emitter pixel structure
Data Source
AI summary
Methods for integrating an image sensor and a light emitting diode (LED) leverage conformal depositions to achieve a single-sided, same height arrangement of contacts. In some embodiments, the method includes forming a plurality of cavities on a substrate where the plurality of cavities have a cavity profile and are configured to accept an emitter pixel structure or a sensor pixel structure, forming an emitter pixel structure in a cavity on the substrate where the emitter pixel structure is configured to have a plurality of exposed direct emitter contact areas on a same side and at a same height, and forming at least one sensor pixel structure in a cavity on the substrate where the sensor pixel structure is configured to have a plurality of exposed direct sensor contact areas on a same side and at a same height.