Series-Connected LED Cells with Ion Implantation Isolation
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Solution Overview
Problem
Existing light emitting diodes (LEDs) face challenges in process stability and efficient electrical connection of multiple cells, which affects their performance and reliability, especially under high current applications.
Innovation Solution
A light emitting device design featuring a plurality of cells electrically connected in series, with a conductive support substrate, reflective electrodes, and insulating ion implantation layers to enhance stability and light extraction, allowing for improved thermal stability and reduced variation in characteristic curves.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If multiple light emitting cells are electrically connected in series on a substrate, then the light efficiency and current handling capability are improved, but the process stability deteriorates due to connection reliability issues
Solution Approach 1:
The patent introduces a contact part as an intermediary component that electrically connects the first conductivity type first semiconductor layer to the second electrode. This contact part serves as a mediator that ensures reliable electrical connection between series-connected light emitting cells, thereby improving process stability while maintaining high current handling capability
Solution Approach 2:
The patent applies insulating ion implantation layers in advance to specific regions before final electrical connection is established. This preliminary insulating treatment prevents unwanted electrical interference and ensures stable processing conditions when connecting multiple cells in series, thereby improving process stability
2Reliability
If a contact part directly connects the first conductivity type first semiconductor layer to the second electrode, then the electrical connection efficiency is improved, but unwanted electrical contact with the second conductivity type second semiconductor layer occurs
Solution Approach 1:
The patent applies insulating ion implantation layers selectively to specific local regions - between the contact part and the second conductivity type second semiconductor layer - while leaving other regions conductive. This localized insulating treatment prevents unwanted electrical contact in critical areas while maintaining necessary electrical connections elsewhere, thereby eliminating harmful electrical interference
3Reliability
If insulating layers are added between the contact part and semiconductor layers, then unwanted electrical contact is prevented, but the manufacturing complexity increases
Solution Approach 1:
The patent replaces traditional multi-layer insulating film deposition processes with ion implantation technology. Instead of mechanically building up multiple insulating layers through deposition, ion implantation directly modifies the electrical properties of existing layers, achieving the same insulating effect with a simpler, more integrated process that reduces manufacturing complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution improves process stability and reliability by ensuring efficient electrical connections and high current applications, while also enhancing light extraction efficiency through reflective electrodes and insulating layers.
Implementation Method 1
a first insulating ion implantation layer between the contact part and the second conductivity type second semiconductor layer
Implementation Method 2
the first and second electrodes are reflective electrodes
Data Source
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AI summary
A light emitting device according to the embodiment includes a first light emitting structure (10) including a first conductive type first semiconductor layer (11), a first active layer (12) under the first conductive type first semiconductor layer (11), and a second conductive type second semiconductor layer (13) under the first active layer (12); a first reflective electrode (17) under the first light emitting structure (10); a second light emitting structure (20) including a first conductive type third semiconductor layer (21), a second active layer (22) under the first conductive type third semiconductor layer (21), and a second conductive type fourth semiconductor layer (23) under the second active layer (22); a second reflective electrode (27) under the second light emitting structure (20); a contact part (43) that electrically connects the first conductive type first semiconductor layer (11) of the first light emitting structure (10) to the second reflective electrode (27); and a first insulating ion implantation layer (41) between the contact part (43) and the second conductive type second semiconductor layer (13).