Light-Emitting Element Side Surface Leakage Suppression

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Solution Overview

Problem

Light-emitting elements face instability due to leakage currents at the side surfaces of semiconductor stacked bodies, leading to fluctuations in drive voltage, which existing manufacturing methods fail to adequately address.

Innovation Solution

A method involving the preparation of a semiconductor stacked body with specific conductivity types, formation of insulating layers, and introduction of oxygen in a processing atmosphere to increase resistance at the side surfaces, thereby suppressing leakage currents and stabilizing characteristics.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional manufacturing methods are used, then the manufacturing process is simple, but leakage currents occur at the side surfaces causing unstable characteristics

Engineering Contradiction:
Improvecharacteristic stabilityVSAvoidmanufacturing process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

An insulating layer is formed on the semiconductor stacked body before electrode formation, and oxygen is introduced in advance to increase resistance at side surfaces. This preliminary action prevents leakage currents that would otherwise occur during subsequent processing and operation, stabilizing characteristics without requiring fundamental changes to the manufacturing workflow

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

Oxygen is introduced into the insulating layer at the side surfaces of the semiconductor stacked body through thermal oxidation or plasma treatment. This accelerated oxidation increases the resistance at these critical regions, effectively suppressing leakage currents and improving characteristic stability

Inventive Principle:
Principle #38Strong oxidants (Accelerated oxidation)

2Reliability

If oxygen introduction processing is added, then leakage currents are suppressed and characteristics are stabilized, but the manufacturing process becomes more complex

Engineering Contradiction:
Improvecharacteristic stabilityVSAvoidmanufacturing ease
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The manufacturing process utilizes parameter changes by controlling oxygen introduction conditions (temperature, atmosphere composition, processing time) to achieve the desired resistance increase at side surfaces. By optimizing these parameters, the process achieves reliable characteristic stabilization while keeping the additional processing steps manageable and integrated into existing manufacturing workflows

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method effectively suppresses leakage currents and stabilizes the characteristics of light-emitting elements by increasing the resistance at the side surfaces, leading to consistent drive voltage and improved light extraction efficiency.

Implementation Method 1

a processing process of introducing oxygen into a portion of the first semiconductor layer including a first surface formed in the removal process, the introducing being performed by processing the semiconductor stacked body in an atmosphere including oxygen after the removal process

Methodology Applied
Scientific EffectOxidation: Oxidation

Data Source

PatentUS10825955B2Method for manufacturing light-emitting element
Publication Date: 2020.11.03 NICHIA CORP
  • US10825955B2 patent drawing
  • US10825955B2 patent drawing
  • US10825955B2 patent drawing

AI summary

A method for manufacturing a light-emitting element includes: a preparation process including preparing a semiconductor stacked body that includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer, the first semiconductor layer including a semiconductor of a first conductivity type, the second semiconductor layer including a semiconductor of a second conductivity type; a first layer formation process including forming a first layer on the first semiconductor layer, the first layer being made of an insulating material; a removal process including removing a portion of the first semiconductor layer and a portion of the first layer; a processing process including introducing oxygen into a portion of the first semiconductor layer that includes a first surface formed in the removal process, the introducing being performed by, after the removal process, processing the semiconductor stacked body in an atmosphere including oxygen.