Light Emitting Device Sidewall Electrode Current Distribution
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Solution Overview
Problem
Current light emitting devices in display panels face issues with yield and reliability due to unsatisfactory performance in aspects such as current distribution and manufacturing processes.
Innovation Solution
A light emitting device design featuring a semiconductor structure with a light emitting layer between two semiconductor layers, an extending electrode on the sidewall connected to a second electrode, and an adhesive layer for transposition processing, which increases contact area and avoids high temperature and pressure processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional light emitting devices are used in display panels, then the basic light emission function is achieved, but the yield and reliability are unsatisfactory due to poor current distribution
Solution Approach 1:
The patent introduces a side wall electrode extending along the side wall of the semiconductor structure, adding a vertical/d lateral dimension to the electrode configuration. This dimensional change allows current to be injected not only from the top surface but also from the side wall, creating a more uniform three-dimensional current distribution throughout the light emitting layer, thereby improving reliability and yield.
Solution Approach 2:
The electrode system is segmented into multiple components: a top surface electrode and a side wall electrode. This segmentation allows independent optimization of current injection paths - the top electrode provides vertical current while the side wall electrode provides lateral current, together achieving uniform current distribution that neither electrode could achieve alone.
2Ease of manufacture
If traditional manufacturing processes are used, then the device structure is formed, but the process is complex and requires high temperature and pressure processing
Solution Approach 1:
The patent employs low-temperature plasma-based deposition techniques to form the side wall electrode and insulating layers, significantly reducing the processing temperature compared to conventional high-temperature sintering or CVD processes. This parameter change in temperature enables the use of flexible substrates and simplifies the manufacturing process while maintaining device performance.
Solution Approach 2:
An insulating layer is introduced as an intermediary between the side wall electrode and the semiconductor structure. This intermediary layer enables the side wall electrode to be formed using low-temperature processes without directly contacting and potentially damaging the semiconductor material, thereby simplifying the overall manufacturing process.
Data Source
AI summary
A light emitting diode includes a semiconductor structure, a first electrode, a second electrode, and an extending electrode. The semiconductor structure has at least one sidewall and includes a light emitting layer, a first semiconductor layer, and a second semiconductor layer. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The first electrode is electrically connected to the first semiconductor layer of the semiconductor structure. The first semiconductor layer is disposed between the light emitting layer and the first electrode. The second electrode is electrically connected to the second semiconductor layer of the semiconductor structure. The second semiconductor layer is disposed between the light emitting layer and the second electrode. The extending electrode is disposed on the sidewall of the semiconductor structure and is electrically connected to the second electrode.