Semiconductor LED Structure With High-Resistance Sidewall Isolation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor light-emitting devices face issues with non-conforming items due to shorting caused by solder layers contacting the semiconductor layers, which existing technologies fail to adequately prevent.
Innovation Solution
A semiconductor light-emitting device with a stacked structure featuring a cutout section and a high-resistance region on its side faces or substrate, formed through ion injection or other methods, to prevent shorting by increasing electrical resistance and isolating the conductive-type semiconductor layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a solder layer is used to mount the semiconductor layer on a support member, then the semiconductor light-emitting device can be assembled and mounted, but the solder layer may contact the semiconductor layers and cause shorting, leading to non-conforming items
Solution Approach 1:
The patent applies local quality by creating a high-resistance region at specific locations (side faces of the semiconductor layer) where solder contact might occur. This high-resistance region is formed by ion injection or implantation, creating a localized barrier that prevents shorting between the semiconductor layer and solder layer, while allowing the rest of the structure to maintain its normal electrical properties and mounting functionality.
2Device complexity
If the semiconductor layer structure is simplified without additional protective features, then the manufacturing process is easier, but shorting occurs when solder contacts the conductive semiconductor layers
Solution Approach 1:
The patent applies preliminary action by forming the high-resistance region during the semiconductor layer fabrication process, before the mounting and soldering steps. This proactive approach creates the protective barrier in advance, preventing shorting issues before they can occur during assembly, rather than requiring additional protective structures or post-assembly corrections.
3Productivity
If no high-resistance region is provided, then the manufacturing process is simpler, but shorting occurs between solder layer and semiconductor layers causing non-conforming items
Solution Approach 1:
The patent applies parameter changes by modifying the electrical resistance parameter of the semiconductor layer through ion injection or implantation. This creates a high-resistance region that acts as an electrical barrier, preventing shorting and improving manufacturing yield. The resistance parameter is changed locally at the side faces where solder contact is most likely to occur.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The high-resistance region effectively suppresses shorting and non-conforming item production, ensuring reliable operation even when the solder layer contacts the semiconductor layers, thereby enhancing manufacturing yield and device performance.
Implementation Method 1
the high-resistance region is provided from the vicinity of the bottom face of the cutout section to the side face of the stacked body and has electric resistance higher than the electric resistance of the stacked body in a periphery of the high-resistance region
Implementation Method 2
formed through ion injection or other methods, to prevent shorting by increasing electrical resistance
Data Source
AI summary
A semiconductor light-emitting device includes a stacked body, a cutout section, and a high-resistance region. The stacked body includes a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer in this order and has paired side faces opposed to each other. The cutout section is provided on at least one of the paired side faces of the stacked body and has a bottom face where the first conductive-type semiconductor layer is exposed. The high-resistance region is provided from the vicinity of the bottom face of the cutout section to the side face of the stacked body and has electric resistance higher than the electric resistance of the stacked body in a periphery of the high-resistance region.