LED Structure with SixNy Mask for Light Extraction
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Solution Overview
Problem
Conventional light-emitting diodes (LEDs) suffer from low luminous efficiency due to high dislocation density, which increases leakage current and reduces light extraction efficiency.
Innovation Solution
A method involving a SixNy mask is used to deposit layers in an LED structure, reducing dislocation density and enhancing light extraction by creating a textured surface for improved photon escape, comprising depositing a first n-doped layer, a SixNy mask, a second n-doped layer, and a p-doped layer, with the mask reducing dislocations and facilitating increased light extraction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional LED structure is used, then the device is simple to manufacture, but the dislocation density is high leading to low luminous efficiency
Solution Approach 1:
The LED structure is segmented into multiple functional layers including n-doped layer, MQW active layer, p-doped layer, and contact layers. The segmentation allows each layer to be optimized independently for its specific function, reducing overall dislocation density while maintaining manufacturability through standardized layer deposition processes
Solution Approach 2:
The patent employs a nested layer structure where the MQW active layer is positioned within the n-doped and p-doped layers, which are themselves positioned on the substrate and contact layers. This nesting allows dislocation filtering at each interface, progressively reducing dislocation density as light travels through the structure, thereby improving luminous efficiency without requiring complete structural redesign
2Reliability
If dislocation density is reduced, then light extraction efficiency increases, but the manufacturing process becomes more complex
Solution Approach 1:
The patent implements preliminary dislocation filtering by designing specific layer thicknesses and compositions (e.g., n-doped layer thickness of 1-10 micrometers, p-doped layer thickness of 0.1-5 micrometers) that are deposited first to filter dislocations before they reach the active region. This preliminary action reduces the need for complex post-processing while maintaining high light extraction efficiency
Solution Approach 2:
The patent optimizes deposition parameters including layer thickness, doping concentration, and material composition (GaN, AlGaN, InGaN) to achieve the desired dislocation density reduction. By carefully controlling these parameters during standard deposition processes, the patent reduces manufacturing complexity compared to requiring entirely new fabrication techniques
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach results in reduced leakage current and increased luminous efficiency by minimizing dislocation density and creating a higher surface area for photon emission, leading to enhanced light extraction and improved LED performance.
Implementation Method 1
the SixNy mask reduces dislocations in at least one of the second n-doped layer, the active layer, and the p-doped layer
Implementation Method 2
creating a textured surface for improved photon escape, comprising depositing a first n-doped layer, a SixNy mask, a second n-doped layer, and a p-doped layer, with the mask reducing dislocations and facilitating increased light extraction
Data Source
AI summary
A light-emitting diode (LED) structure fabricated with a SixNy layer responsible for providing increased light extraction out of a surface of the LED is provided. Such LED structures fabricated with a SixNy layer may have increased luminous efficiency when compared to conventional LED structures fabricated without a SixNy layer. Methods for creating such LED structures are also provided.