LED Semiconductor Body Strain Compensation
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Solution Overview
Problem
LED semiconductor bodies have internal quantum efficiencies below ideal values and suffer from increased spectral width and non-linear power emission with respect to operating current, particularly at high currents.
Innovation Solution
The LED semiconductor body employs a semiconductor layer sequence with a quantum structure comprising strained quantum and barrier layers of opposite signs, allowing strain compensation to improve crystal quality, reduce dislocations, and enhance linearity of radiation power with operating current, while maintaining a narrow emission spectrum.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If the quantum layer is heavily strained to increase layer thickness and improve radiation generation, then the radiation generation capability is improved, but dislocations form and crystal quality deteriorates
Solution Approach 1:
A strain compensation layer is introduced as an intermediary between the heavily strained quantum layer and the substrate. This compensation layer has opposite strain characteristics that counterbalance the strain in the quantum layer, allowing the quantum layer to maintain high strain for improved radiation generation while the compensation layer prevents dislocation formation, thus preserving crystal quality.
Solution Approach 2:
The strain characteristics of the compensation layer are specifically designed to have opposite signs to the quantum layer strain. By adjusting the composition and thickness parameters of the compensation layer, the cumulative strain is reduced to near-zero values, enabling thick quantum layers with high radiation efficiency without the formation of dislocations.
2Productivity
If multiple quantum layers are stacked to improve linearity at high currents, then linearity of power emission is improved, but device complexity increases
Solution Approach 1:
The active region is segmented into multiple identical or similar quantum layer units stacked in sequence. Each quantum layer is surrounded by barrier layers and strain compensation layers, creating modular repeating structures. This segmentation allows the device to achieve improved linearity at high currents through multiple contributing layers while maintaining relatively simple fabrication processes through repetition of the same structural unit.
3Power
If the quantum layer thickness is increased to improve radiation generation, then radiation output is improved, but spectral width increases
Solution Approach 1:
The thickness of the quantum layer is precisely controlled within a specific range (5-15 nm) to achieve the desired balance between radiation output and spectral width. Additionally, the composition parameters of the quantum layer materials are optimized to maintain narrow spectral emission while allowing sufficient thickness for high radiation generation capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration increases internal quantum efficiency, reduces spectral width, and ensures linear power emission with operating current, even at high currents, resulting in improved crystal quality and efficient radiation generation.
Implementation Method 1
a quantum structure (2) provided for generating incoherent radiation and having at least one quantum layer (3) and at least one barrier layer (4)
Implementation Method 2
the quantum layer (3) and the barrier layer (4) are strained with opposite signs to one another. Since the barrier layer (4) has a strain which has an opposite sign to the strain of the quantum layer (3), the strain of the quantum layer (3) can be compensated by the strain of the barrier layer (4)
Data Source
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AI summary
The invention describes an LED semiconductor body with a semiconductor layer sequence which comprises a quantum structure intended to generate radiation and having at least one quantum layer and at least one barrier layer, wherein the quantum layer and the barrier layer are oppositely biased.