LED Stress Layer Structure for Wavelength Uniformity
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing LED structures face issues with non-uniform wavelengths due to varying preparation environments, leading to inconsistent light-emitting quality, primarily because of electron overflow and reduced luminous efficiency caused by the imbalance in electron and hole concentrations.
Innovation Solution
An LED structure is developed with a first stress layer that applies compressive stress perpendicular to and tensile stress parallel to the side walls of the LED light emitting units, using materials like SiN or SiO2, to improve wavelength uniformity and enhance luminous efficiency by adjusting the stress levels and compositions at different positions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If multiple preparation processes are used to fabricate LED structure, then the LED structure can be formed with required layers and components, but the wavelengths of the LED structures at different positions become non-uniform due to varying preparation environments
Solution Approach 1:
The patent applies stress layer thickness adjustment as a parameter change to compensate for preparation environment variations. By setting different thicknesses of the first stress layer at different positions (thicker at edges, thinner at center), the patent modifies the stress distribution to counteract the non-uniform wavelength shifts caused by preparation process variations, thereby improving wavelength uniformity across the LED structure
Solution Approach 2:
The patent introduces a stress layer configuration that applies preliminary compensatory stress before the LED structure is fully operational. The first stress layer is designed with specific thickness variations to preemptively counteract the wavelength non-uniformity that would otherwise result from preparation environment differences, preventing the harmful effect before it manifests in the final product performance
2Device complexity
If standard LED structure is used without stress adjustment, then the structure is simple and easy to manufacture, but electron overflow occurs and luminous efficiency is reduced due to imbalance in electron and hole concentrations
Solution Approach 1:
The patent modifies the physical parameter of the stress layer thickness to change the stress state applied to the LED light emitting unit. By adjusting the thickness of the first stress layer, the patent alters the compressive and tensile stress distribution, which in turn modifies the band structure and carrier concentration distribution, reducing electron overflow and improving luminous efficiency
Solution Approach 2:
The stress layer acts as an intermediary element between the substrate and the LED light emitting unit. This intermediate layer mediates the mechanical stress applied to the semiconductor layers, influencing the crystal lattice structure and carrier behavior without directly participating in the light emission process, thereby improving energy efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The stress layer configuration improves wavelength uniformity and luminous intensity by reducing non-radiative recombination and increasing hole concentration, thereby enhancing the overall light-emitting performance of the LED structure.
Implementation Method 1
the first stress layer is configured to apply a compressive stress to the side wall of the LED light emitting unit in a direction perpendicular to the side wall of the LED light emitting unit, and apply a tensile stress to the side wall of the LED light emitting unit in a direction parallel to the side wall of the LED light emitting unit
Data Source
AI summary
Disclosed are an LED structure and a preparing method of an LED structure. The LED structure includes: an LED light emitting unit including a first semiconductor layer, a light emitting layer and a second semiconductor layer which are stacked; and a first stress layer surrounding the LED light emitting unit and covering a side wall of the LED light emitting unit. In the present disclosure, the first stress layer is configured to apply a stress to the side wall of the LED light emitting unit, adjust a wavelength of the LED structure, and improve a wavelength uniformity of the LED structure. In addition, since a side wall of the LED structure is extruded, and a luminous efficiency of the LED structure is effectively improved.