Sub Barrier Layer Energy Band Gap Variation in LED Devices

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Solution Overview

Problem

Light emitting devices face challenges in minimizing current leakage and lowering operating voltage while maintaining high light output efficiency, which affects their performance and efficiency in various applications.

Innovation Solution

The light emitting device incorporates a main barrier layer with a plurality of sub barrier layers and a basal layer, where the energy band gaps of the sub barrier layers are sequentially increased and decreased in a parabolic form, allowing for efficient electron movement and reduced current leakage without increasing operating voltage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional barrier layer structure is used, then current leakage can be reduced, but operating voltage increases

Engineering Contradiction:
Improvecurrent leakage reductionVSAvoidoperating voltage
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The barrier layer is divided into multiple sub-barrier layers with different energy band gaps arranged in a specific sequence. This segmentation allows each sub-layer to contribute differently to electron blocking, achieving effective current leakage reduction while maintaining lower overall operating voltage compared to a single thick barrier layer.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different sub-barrier layers are assigned different energy band gap characteristics tailored to their specific positions and functions within the structure. This local optimization enables precise control of electron transport properties, reducing current leakage at critical interfaces while preserving electron injection efficiency at other regions.

Inventive Principle:
Principle #3Local quality

2Reliability

If the energy band gap of the barrier layer is increased to reduce current leakage, then light output efficiency decreases due to higher operating voltage

Engineering Contradiction:
Improvecurrent leakage reductionVSAvoidlight output efficiency
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The barrier function is segmented across multiple layers with varying band gaps, allowing the structure to achieve effective current blocking without requiring any single layer to have an excessively large band gap that would hinder electron injection and reduce light output efficiency.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The energy band gap parameter is varied systematically across different sub-barrier layers rather than using a uniform value. This parameter change strategy enables the structure to optimize both electron blocking (for current leakage reduction) and electron injection (for maintaining light output efficiency).

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances light output efficiency by reducing current leakage and maintaining low operating voltage, improving the overall performance of the light emitting device in applications such as lighting systems and display apparatuses.

Implementation Method 1

the plurality of sub barrier layers including a first section in which energy band gaps of the plurality of sub barrier layers are increased and a second section in which energy band gaps of the plurality of sub barrier layers are decreased

Methodology Applied
Scientific EffectEnergy band gap variation:

Data Source

PatentUS8669545B2Light emitting device having sub barrier layers with varying energy bands, light emitting device package and lighting system including the light emitting device package
Publication Date: 2014.03.11 SUZHOU LEKIN SEMICON CO LTD
  • US8669545B2 patent drawing
  • US8669545B2 patent drawing
  • US8669545B2 patent drawing

AI summary

A light emitting device includes an active layer including a quantum barrier and a quantum well, a first conductive type semiconductor layer disposed at one side of the active layer, and a second conductive type semiconductor layer disposed at the other side of the active layer, wherein the first conductive type semiconductor layer or the second conductive type semiconductor layer includes a main barrier layer, and the main barrier layer includes a plurality of sub barrier layers and a basal layer disposed between the plurality of sub barrier layers. The plurality of sub barrier layers includes a first section in which energy band gaps of the plurality of sub barrier layers are increased and a second section in which energy band gaps of the plurality of sub barrier layers are decreased.