LED Subpixel Light Shielding for Small Emission and High Contrast
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Solution Overview
Problem
Display technologies face challenges in achieving a small light emitting area without reducing the chip area, particularly with horizontal light emitting diode chips, which are limited by size and difficult to test and repair, and vertical chips are hard to test and repair.
Innovation Solution
A subpixel structure and pixel structure utilizing a light emitting diode chip with a light shielding layer that exposes the light emitting region, allowing for a small light emitting area less than or equal to one tenth of the chip area, and enabling efficient mass transfer and improved contrast, while allowing for easier testing and repair of horizontal chips.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If the light emitting area is reduced to increase contrast, then the contrast is improved, but the chip area is reduced
Solution Approach 1:
The patent divides the chip into distinct functional regions: a light emitting region and a non-light emitting region. The light shielding layer segments the chip surface to control light emission spatially, allowing the light emitting area to be small (≤1/10 of chip area) while maintaining a large overall chip area for mass transfer compatibility.
Solution Approach 2:
The patent applies local quality by creating a light shielding layer that selectively blocks light in specific regions. The light emitting region has different optical properties (transparent or low absorption) compared to the non-light emitting region (covered by light shielding material), enabling high contrast through localized optical property differentiation while preserving the full chip area.
2Ease of manufacture
If horizontal light emitting diode chips are used for mass transfer, then mass transfer is enabled, but the light emitting area control is limited
Solution Approach 1:
The patent resolves the area control limitation by transitioning from planar control to vertical control. Instead of relying on the horizontal chip geometry for light emitting area control, the invention uses a vertical light shielding layer structure that can be precisely controlled in thickness and positioning, enabling accurate light emitting area control (≤1/10 of chip area) while maintaining horizontal chip dimensions suitable for mass transfer.
3Area of stationary object
If vertical light emitting diode chips are used, then chip area is maintained, but testing and repair become difficult
Solution Approach 1:
The patent inverts the conventional approach by using a horizontal chip orientation with a vertical light shielding layer structure. This inversion maintains the advantages of horizontal chips (ease of testing and repair, mass transfer compatibility) while achieving the light emitting area control typically associated with vertical chip designs through the innovative light shielding layer configuration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution allows for a small light emitting area to be achieved without reducing the chip area, enhancing display contrast and facilitating the testing and repair of horizontal light emitting diode chips, while also enabling the use of larger chips without affecting display quality.
Implementation Method 1
a light shielding layer, and the light shielding layer exposes a light emitting region of the light emitting diode chip
Data Source
AI summary
A subpixel structure includes a substrate and a light emitting diode chip. The light emitting diode chip is disposed on the substrate. The light emitting diode chip has a chip area and a light emitting area, and the light emitting area is less than or equal to one tenth of the chip area.