LED Superlattice Structure for High-Current Light Output

The electron-blocking layer is segmented into multiple quantum wells separated by barrier layers, creating a multi-layered structure that provides both electron blocking capability and enhanced light emission. Each quantum well serves as a separate region for carrier confinement and recombination, while the barrier layers prevent electron leakage to the electron-blocking layer.

The electron-blocking layer is constructed as a composite structure combining multiple materials with different band gap energies - InGaN quantum wells for light emission and AlGaN barrier layers for electron blocking. This composite approach allows simultaneous optimization of both light output power and electron blocking performance.

Instead of using a single high-aluminum-content layer, the structure is segmented into multiple layers with varying aluminum contents. The barrier layers have high aluminum content for electron blocking, while the quantum wells have lower aluminum content for efficient light emission, simplifying the epitaxial growth process by distributing the manufacturing complexity across multiple functional layers.

Different regions of the electron-blocking layer structure have different aluminum contents optimized for their specific functions. The barrier layers have high aluminum content localized for electron blocking, while the quantum wells have optimized aluminum content for light emission, allowing each region to be manufactured with appropriate parameters rather than requiring uniform high-aluminum content throughout.