LED Temperature Detecting Pattern for PN Junction Monitoring
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Solution Overview
Problem
Traditional methods for measuring the temperature of light emitting diodes (LEDs) are imprecise due to the distance of external temperature sensors from the PN junction, leading to inaccurate thermal resistance calculations, and IR detection is not suitable for packaged LEDs.
Innovation Solution
A light emitting diode with a built-in temperature detecting pattern, where a substrate, semiconductor structure, and insulating layer are integrated with a temperature detecting pattern formed adjacent to the semiconductor structure, allowing for precise and real-time temperature measurement of the PN junction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If an exterior temperature sensor is used to measure the temperature of the LED, then the temperature can be measured without integrating a sensor into the LED structure, but the measured temperature cannot represent the PN junction temperature precisely due to the longer distance from the sensor to the PN junction
Solution Approach 1:
The patent merges the temperature sensing function directly into the LED structure by forming a temperature detecting pattern (TDP) within the LED package during the manufacturing process. The TDP is integrated with the LED chip and bonding structure, eliminating the need for separate exterior temperature sensors and ensuring the sensing element is positioned at the optimal location near the PN junction for accurate temperature measurement.
2Measurement precision
If a temperature sensor is integrated into the LED with a shorter distance to the PN junction, then the temperature measurement precision is improved, but the device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent segments the LED manufacturing process into distinct stages, with the temperature detecting pattern being formed as a separate functional element during the chip preparation stage. The TDP is patterned on the LED chip before bonding, allowing it to be positioned optimally near the PN junction without requiring post-assembly modifications or complex integration steps.
Solution Approach 2:
The temperature detecting pattern is formed in advance during the LED chip manufacturing process, before the LED is packaged and assembled. This preliminary action ensures the TDP is already in its optimal position relative to the PN junction, eliminating the need for complex alignment and positioning operations during final assembly.
3Ease of operation
If IR detection is used to measure the temperature of packaged LEDs, then non-contact temperature measurement is achieved, but the method is not suitable for general production application of packaged LEDs
Solution Approach 1:
The LED structure itself provides the temperature sensing capability through the integrated temperature detecting pattern, making the LED self-diagnostic for temperature monitoring. This eliminates the need for external IR detection equipment and enables direct electrical readout of temperature data, which is far more suitable for automated production line testing and quality control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The integrated temperature detecting pattern provides accurate and immediate temperature readings of the PN junction, enhancing the precision of thermal resistance calculations and enabling real-time temperature monitoring during operation.
Implementation Method 1
The temperature detecting pattern is integral with the light emitting diode... user can know the temperature of the PN junction precisely and in real-time
Data Source
AI summary
A light emitting diode (LED) includes a substrate, a temperature detecting pattern, and a semiconductor structure. The temperature detecting pattern is formed on the substrate. Then the semiconductor structure is formed on the temperature detecting pattern and the substrate. The semiconductor structure includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer. Per above-mentioned structural design, the temperature detecting pattern directly integrated into the LED can measure the actual temperature of PN junction with high precision.