LED-TFT Integrated Circuit Layout for Low-Temperature Interconnects
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Solution Overview
Problem
The high cost of optoelectronic devices comprising light-emitting diodes is partly due to the non-optimized connections between wafers, which increases manufacturing expenses.
Innovation Solution
An integrated circuit design with light-emitting diodes, thin film transistors, and a stack of electrically-insulating layers, where conductive elements connect transistors to light-emitting diodes, formed using wire-shaped or tapered semiconductor elements, and thin film transistors distributed in multiple stages, all manufactured at temperatures lower than 150°C.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If separate wafers are used for light-emitting diodes and transistors with non-optimized connections, then device functionality is achieved, but manufacturing cost increases
Solution Approach 1:
The patent merges the light-emitting diodes and transistors onto the same wafer substrate, eliminating the need for separate wafer fabrication and complex inter-wafer connections. This integration directly reduces manufacturing costs while maintaining device functionality through on-wafer conductive pathways.
Solution Approach 2:
The wafer substrate serves multiple functions simultaneously: it acts as the base for light-emitting diode fabrication, provides the platform for transistor formation, and integrates the interconnection network. This multi-functional use of the substrate eliminates the need for separate connection structures between different wafers.
2Reliability
If conventional high-temperature manufacturing processes are used, then good electrical connections are achieved, but thermal impact on device performance increases
Solution Approach 1:
The patent changes the temperature parameter from conventional high-temperature processes to low-temperature processes (below 150°C). This parameter change enables the formation of reliable electrical connections and semiconductor structures without subjecting the light-emitting diodes to damaging thermal conditions that would degrade their performance.
Solution Approach 2:
The patent replaces thermal-based connection formation (which relies on high-temperature sintering or bonding) with alternative mechanisms such as low-temperature deposition or field-effect-driven connection formation. This substitution allows for reliable electrical connections without the harmful thermal effects of conventional high-temperature processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces manufacturing costs by optimizing the integration of light-emitting diodes and transistors within the same wafer, enhancing the efficiency and reducing thermal impact on the device performance.
Implementation Method 1
devices capable of converting an electric signal into an electromagnetic radiation, and particularly devices dedicated to emitting an electromagnetic radiation, particularly light
Data Source
AI summary
An optoelectronic device including an integrated circuit including light-emitting diodes, thin film transistors, and a stack of electrically-insulating layers, said stack being located between the light-emitting diodes and the transistors, said stack further including conductive elements, between and through said insulating layers, said conductive elements connecting at least some of the transistors to the light-emitting diodes.