LED Through-Hole Electrode Structure for Uniform Current Spreading
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Solution Overview
Problem
Conventional light-emitting diodes suffer from uneven current distribution leading to reduced brightness, uneven luminescence, and color changes due to non-uniform carrier density.
Innovation Solution
A semiconductor device with a pin-shaped electrode design featuring conductive through holes and a current spreading composite layer, comprising alternating doped and undoped layers, to uniformly distribute current and enhance brightness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If conventional LED structure is used, then device simplicity is maintained, but current distribution becomes uneven leading to reduced brightness and luminous efficiency
Solution Approach 1:
The upper electrode is segmented into multiple conductive through holes distributed across the first semiconductor layer, replacing a single continuous electrode structure. This segmentation enables uniform current distribution by creating multiple current injection paths, directly addressing the uneven current distribution problem while improving brightness and luminous efficiency.
Solution Approach 2:
A current spreading composite layer with alternating doped and undoped layers is introduced at specific locations within the first semiconductor layer. This local modification creates regions with different electrical properties that guide and uniformize current flow, solving the brightness uniformity issue without requiring complete structural redesign.
2Loss of energy
If current spreading is improved through structural modifications, then luminous efficiency increases, but manufacturing complexity increases
Solution Approach 1:
The current spreading composite layer is divided into alternating doped and undoped sub-layers, which can be fabricated using standard semiconductor epitaxial growth techniques. This layered segmentation allows precise control of electrical properties while maintaining compatibility with existing manufacturing processes, improving luminous efficiency without excessive manufacturing complexity.
Solution Approach 2:
The doping concentration and layer thickness parameters in the current spreading composite layer are optimized to achieve uniform current distribution. By adjusting these parameters, luminous efficiency is improved while using conventional doping and fabrication techniques, avoiding the need for entirely new manufacturing methods.
3Stability of the object's composition
If uniform current distribution is achieved, then brightness uniformity improves, but device structure becomes more complex
Solution Approach 1:
Alternating doped and undoped layers are introduced locally within the first semiconductor layer to create specific electrical field distributions. This local quality modification guides carrier flow uniformly across the active region, achieving stable and uniform carrier density without requiring complete structural overhaul.
Solution Approach 2:
The current spreading composite layer combines doped and undoped semiconductor materials in an alternating layered structure. This composite approach creates tailored electrical properties that promote uniform current and carrier distribution, improving brightness uniformity while using standard semiconductor materials and fabrication techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design achieves uniform current spreading, increasing brightness and reducing shading, thereby improving luminous efficiency and light extraction.
Implementation Method 1
The conductive through holes are vertically disposed in the first semiconductor layer so that the upper electrode is electrically connected to the light emitting layer through the conductive through holes
Implementation Method 2
a current spreading composite layer, sandwiched in the first semiconductor layer. The conductive through holes vertically penetrate the current spreading composite layer
Implementation Method 3
When electrons and holes are injected into the P-N junction region, they will recombine in this region. This recombination process releases energy, which is the light emitted by the LEDs
Data Source
AI summary
A semiconductor device is provided. The semiconductor device comprises a substrate, an upper electrode, a first semiconductor layer, a light-emitting layer, a second semiconductor layer and a plurality of conductive through holes. The second semiconductor layer, the light-emitting layer, the first semiconductor layer and the upper electrode are sequentially disposed on the substrate. The conductive through holes are vertically disposed in the first semiconductor layer so that the upper electrode is electrically connected to the light emitting layer through the conductive through holes.