LED Substrate Transfer Using a Transition Carrier for Bulk Chip Placement
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Solution Overview
Problem
The existing methods for manufacturing light-emitting diode (LED) substrates face inefficiencies due to the need to transfer LED chips from multiple small substrates to a larger driving substrate, resulting in low transfer efficiency.
Innovation Solution
A manufacturing method that involves forming epitaxial layer groups of LED chips on substrates, transferring these groups onto a transition carrier substrate with a larger area, and then transferring the LED chips from the transition carrier substrate to a driving substrate, allowing for more efficient and bulk transfer of LED chips.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If LED chips are transferred from multiple small substrates to a larger driving substrate using existing methods, then the transfer process can be completed, but the transfer efficiency is low
Solution Approach 1:
The invention segments the transfer process into two distinct stages: first, transferring epitaxial layer groups (containing multiple LED chips) from multiple small substrates to a transition carrier substrate; second, transferring individual LED chips from the transition carrier substrate to the driving substrate. This segmentation allows bulk transfer of grouped chips, significantly improving transfer efficiency compared to transferring individual chips one by one.
Solution Approach 2:
The invention introduces a transition carrier substrate as an intermediary between the small substrates and the final driving substrate. This intermediate carrier enables the consolidation and temporary storage of epitaxial layer groups, facilitating efficient bulk transfer operations and reducing the number of direct transfer operations needed between small substrates and the driving substrate.
2Productivity
If multiple LED chips are transferred simultaneously, then the transfer efficiency is improved, but the complexity of the transfer process increases
Solution Approach 1:
The process is divided into two manageable stages: first forming and transferring epitaxial layer groups containing multiple LED chips, then separating and transferring individual chips. This segmentation makes the complex task of simultaneous multi-chip transfer more controllable and manageable, reducing process complexity while maintaining high efficiency.
Solution Approach 2:
The invention performs preliminary actions by first forming epitaxial layer groups on small substrates and transferring these pre-grouped structures to the transition carrier substrate before final chip separation and transfer. This preliminary grouping reduces the complexity of the final transfer operation, as chips are already organized in manageable units.
Data Source
AI summary
A manufacturing method of light-emitting diode substrate and a display device are disclosed. The manufacturing method of the light-emitting diode substrate includes: obtaining an epitaxial layer group of M light-emitting diode chips grown on a substrate; transferring N epitaxial layer groups on N substrates onto a transition carrier substrate, the N epitaxial layer groups on the N substrates being densely arranged on the transition carrier substrate; and transferring at least part of light-emitting diode chips corresponding to the N epitaxial layer groups on the transition carrier substrate onto a driving substrate; the light-emitting diode chips corresponding to the N epitaxial layer groups on the N substrates are configured to emit light of a same color; M is a positive integer greater than or equal to 2, and N is a positive integer greater than or equal to 2.