LED Interface Transition Layer for Metal-Insulator Adhesion
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Solution Overview
Problem
Existing light emitting diodes (LEDs) face issues with insufficient adhesion force of the metal layer on the insulation layer, leading to reliability concerns.
Innovation Solution
The introduction of an interface transition layer made of insulation metal oxide or a stack of insulation metal oxides between the semiconductor epitaxial stack layer and the insulation layer, enhancing the adhesion force between the metal layer and the insulation layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a metal layer is directly deposited on an insulation layer in existing LED structures, then the manufacturing process is simple, but the adhesion force between the metal layer and insulation layer is insufficient
Solution Approach 1:
The patent introduces an interface transition layer composed of insulation metal oxide between the metal layer and the insulation layer. This intermediary layer acts as a mediator that enhances the adhesion force between the metal layer and insulation layer, resolving the adhesion problem without requiring fundamental changes to the overall LED structure.
Solution Approach 2:
The interface transition layer uses insulation metal oxide materials that combine properties of both metals and insulators. This composite material approach creates a gradient transition zone that improves interfacial adhesion while maintaining the functional requirements of both the metal layer and insulation layer.
2Reliability
If the metal layer is directly formed on the insulation layer, then the manufacturing process is straightforward, but the reliability of the LED is reduced due to poor adhesion
Solution Approach 1:
The interface transition layer serves as an intermediary that improves reliability by preventing delamination between the metal layer and insulation layer. This additional layer ensures stable electrical connection and mechanical adhesion, thereby enhancing overall LED reliability.
Solution Approach 2:
The interface transition layer is formed in advance before the metal layer is deposited. This preliminary action prepares the surface with optimal adhesion properties, ensuring that when the metal layer is subsequently deposited, it achieves strong bonding without requiring complex post-processing or repair operations.
3Strength
If an interface transition layer of insulation metal oxide is introduced, then the adhesion force between metal layer and insulation layer is improved, but the number of layers and structural complexity increases
Solution Approach 1:
The interface transition layer is applied locally only at the critical interface between the metal layer and insulation layer, rather than throughout the entire LED structure. This localized approach improves adhesion force where it is most needed while minimizing the overall increase in structural complexity.
Solution Approach 2:
The interface transition layer uses insulation metal oxide materials that can be deposited in thin films using standard semiconductor fabrication techniques. This intermediary layer provides the necessary adhesion improvement while maintaining a compact structure that does not significantly increase the overall device complexity.
Data Source
AI summary
The disclosure relates to a technical field of a semiconductor optoelectronic device, and more particularly, to a light emitting diode and a light emitting device. To solve an issue that a metal layer of the existing light emitting diode has insufficient adhesion on an insulation layer, the light emitting diode includes a semiconductor epitaxial stack layer including a first conductive semiconductor layer, a light emitting layer, and a second conductive semiconductor layer sequentially stacked and disposed; an interface transition layer located above the semiconductor epitaxial stack layer; the interface transition layer including an insulation metal oxide or a stack layer of the insulation metal oxides; a first insulation layer disposed between the interface transition layer and the semiconductor epitaxial stack layer; the metal layer covering a portion of a surface of the interface transition layer and electrically connected to the semiconductor epitaxial stack layer.