Semiconductor Light-Emitting Device Trench Division
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Solution Overview
Problem
Existing methods for fabricating semiconductor light-emitting devices struggle to accurately divide substrates at desired positions, particularly at the bottom, leading to inconsistencies in the fabrication process.
Innovation Solution
A method involving the formation of semiconductor layers with specific trench structures, including first and second trenches with defined widths and depths, and the application of protective films to facilitate precise substrate division, allowing for accurate cleaving along crystal planes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple trenches are formed to improve substrate division precision, then division accuracy improves, but the device complexity increases
Solution Approach 1:
The invention segments the trench formation into two distinct sets (first trenches from top, second trenches from bottom) with different functional requirements. Each set can be optimized independently for its specific purpose, managing complexity by functional separation rather than creating a single complex multi-functional structure.
Solution Approach 2:
The invention applies different trench characteristics to different locations: first trenches from the top surface have specific width and depth parameters optimized for top division, while second trenches from the bottom surface have different parameters optimized for bottom division. This local quality approach allows precise control at each surface without requiring uniform complex structures throughout.
Data Source
AI summary
A method of fabricating a semiconductor light-emitting device includes: (a) forming a semiconductor layer including a light-emitting layer on the first surface of a substrate; (b) forming a first trench and a second trench in the semiconductor layer, the first trench extending in a first direction that is parallel to a principal plane of the substrate, and the second trench being disposed inside and parallel to the first trench; (c) forming a third trench parallel to the first trench in the second surface of the substrate opposite to the first surface of the substrate; and (d) forming a semiconductor light-emitting device by dividing the substrate. In (d), an end of at least one divided side of the semiconductor light-emitting device is in the second trench. The first trench has a first width, and the second trench has a second width. The second width is less than the first width.