Light Emitting Device Package With Trench Substrate Integration
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Solution Overview
Problem
Conventional light emitting device fabrication and packaging processes require complex and separate chip and packaging steps, leading to inefficiencies and reliability issues due to the use of materials like Ag series or epoxy series for die-bonding, which can result in low thermal and electrical conductivity and reliability problems.
Innovation Solution
A light emitting device package is fabricated directly on a substrate with a trench, where a light emitting structure is grown, an electrode is formed, and wire bonding connects it, with a filler filling the trench, using a homogeneous compound semiconductor for high thermal and electrical conductivity, and employing current injection for efficient current spreading.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate chip and packaging processes are used with conventional die-bonding materials, then the fabrication process is well-established, but thermal and electrical conductivity are low and reliability is reduced
Solution Approach 1:
The patent merges the chip fabrication process and packaging process into a single integrated process. The light-emitting structure is grown directly on the substrate in the desired package configuration, eliminating the need for separate die-bonding steps. This integration resolves the contradiction by improving reliability through direct growth while managing complexity through process consolidation rather than elimination.
Solution Approach 2:
The patent changes the fundamental parameter of material connectivity by transitioning from indirect die-bonding connections to direct epitaxial growth connections. This parameter change enables simultaneous optimization of thermal/electrical conductivity and reliability while the trench structure manages the physical complexity of the integrated process.
2Reliability
If homogeneous compound semiconductor is used for direct growth, then thermal and electrical conductivity are enhanced, but the fabrication process becomes more complex
Solution Approach 1:
The patent applies local quality by creating a trench structure with specific geometric characteristics (depth, width, sidewall angles) that are optimized for the direct-growth process. This local structural modification enables the homogeneous compound semiconductor to achieve enhanced thermal and electrical conductivity while the trench geometry manages the fabrication complexity by providing a defined growth template.
3Productivity
If separate chip and packaging processes are performed, then existing manufacturing equipment can be used, but many substrates and complex processes are required
Solution Approach 1:
The patent combines multiple fabrication steps (chip growth, packaging, wire bonding) into a single integrated process that occurs on one substrate. This merging eliminates the need for multiple substrates and sequential processing steps, directly resolving the contradiction by improving productivity through process integration while reducing substrate consumption.
Solution Approach 2:
The substrate serves multiple functions simultaneously: as the growth substrate for the light-emitting structure, as the package body, and as the mounting platform. This multi-functionality resolves the contradiction by enabling single-substrate processing that improves productivity while eliminating the need for additional substrates required in conventional separate processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach eliminates the need for separate chip processes, enhances thermal and electrical conductivity, improves package efficiency, and addresses reliability issues by integrating Epi growth, chip, and packaging on a substrate, while enabling full-color LED production with high thermal stability.
Implementation Method 1
A light emitting device (LED) includes a p-n junction diode which converts electric energy into light energy
Implementation Method 2
since a nitride semiconductor has high thermal stability and wide band gap energy
Implementation Method 3
a wire bonding connecting the electrode with the light emitting structure
Data Source
AI summary
Disclosed are a light emitting device package and a method for fabricating the same. The light emitting device package includes: a trench formed in a substrate; a light emitting structure which is directly grown on a first area of the trench in the substrate; an electrode on the substrate; a wire bonding connecting the electrode with the light emitting structure; anda filler filling the trench.