Micro-interconnects for LED Packaging via Wafer-Level TSV Bonding
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Traditional LED packaging methods, such as wire bonding, become increasingly challenging and costly as LED dies shrink in size, leading to difficulties in achieving efficient electrical connections and maintaining optical and electrical characteristics.
Innovation Solution
The implementation of wafer-level packaging using through-silicon vias (TSVs) and metal features on a silicon substrate, along with a conductive layer and interconnects, to provide direct electrical connections between LED dies and a packaging substrate, reducing assembly time and cost while enhancing bonding efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If wire bonding is used for LED packaging, then electrical connections can be established, but manufacturing difficulty and cost increase as LED die size decreases
Solution Approach 1:
The packaging substrate is segmented into multiple regions with different metal features (bonding pads, through-silicon vias, interconnects) that enable simultaneous bonding of multiple LED dies in parallel, eliminating the sequential wire bonding process and improving manufacturing efficiency for small-form-factor LEDs
Solution Approach 2:
Metal features (bonding pads and through-silicon vias) are introduced as intermediary conductive structures on the packaging substrate, enabling direct electrical connection between LED dies and substrate without requiring wire bonding, thus simplifying the manufacturing process for miniaturized LEDs
2Ease of manufacture
If wire bonding is used for LED packaging, then electrical connections can be established, but assembly time increases with more bonding wires
Solution Approach 1:
Multiple electrical connection functions are merged into a single bonding step by integrating bonding pads, through-silicon vias, and interconnect structures on the packaging substrate, allowing simultaneous establishment of multiple electrical connections in parallel during one bonding process
Solution Approach 2:
Metal features (bonding pads and through-silicon vias) are pre-formed on the packaging substrate before LED die bonding, enabling direct electrical connection without requiring sequential wire bonding operations, thus significantly reducing assembly time
3Ease of manufacture
If longer bonding wires are used, then electrical connections can be established, but electrical and optical characteristics degrade
Solution Approach 1:
Short, direct metal interconnects and through-silicon vias serve as intermediary conductive paths between LED dies and packaging substrate, eliminating the need for long bonding wires and thereby preserving electrical and optical characteristics while enabling direct bonding
Data Source
AI summary
The present disclosure provides a method of fabricating a light emitting diode (LED) package. The method includes bonding a plurality of separated light emitting diode (LED) dies to a substrate, wherein each of the plurality of separated LED dies includes an n-doped layer, a quantum well active layer, and a p-doped layer; depositing an isolation layer over the plurality of separated LED dies and the substrate; etching the isolation layer to form a plurality of via openings to expose portions of each LED die and portions of the substrate; forming electrical interconnects over the isolation layer and inside the plurality of via openings to electrically connect between one of the doped layers of each LED die and the substrate; and dicing the plurality of separated LED dies and the substrate into a plurality of LED packages.


