LED Tunneling Junction Structure for Microdisplay Light Output
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Solution Overview
Problem
Existing light emitting diodes (LEDs) face challenges in enhancing light output efficiency, particularly when scaled to micro or nano sizes for display devices, due to limitations in semiconductor layer configurations and placements.
Innovation Solution
The introduction of a tunneling junction layer as a third semiconductor layer, with specific doping concentrations and thicknesses, and positioning the active layer adjacent to the intermediate portion of the LED, enhances light output efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the active layer is positioned at the intermediate portion of the light emitting element, then light output efficiency is enhanced, but the semiconductor layer configuration becomes more complex
Solution Approach 1:
The semiconductor structure is divided into multiple distinct layers including first and second semiconductor layers, third semiconductor layer (tunneling junction), and fourth semiconductor layer. Each layer serves a specific function, with the active layer positioned at the intermediate portion between the first and second semiconductor layers, enabling optimized light output efficiency through segmented functional zones.
Solution Approach 2:
The third semiconductor layer (tunneling junction layer) is introduced with specific local properties at the intermediate portion where the active layer is positioned. This layer has distinct doping concentrations and thickness parameters that differ from other layers, creating local quality enhancement at the critical light emission region while maintaining simpler configurations in other areas.
2Productivity
If a tunneling junction layer is introduced with specific doping concentrations and thicknesses, then light emission efficiency is improved, but manufacturing precision requirements increase
Solution Approach 1:
The tunneling junction layer (third semiconductor layer) is designed with specific parameter ranges including controlled doping concentrations and thickness dimensions. By optimizing these parameters within defined ranges, the patent achieves improved light emission efficiency while establishing manufacturable specifications that balance performance requirements with fabrication capabilities.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the light emission efficiency of LEDs by optimizing the semiconductor layer structure and placement, leading to enhanced performance in display devices.
Implementation Method 1
The third semiconductor layer may be a tunneling junction layer
Data Source
AI summary
A light emitting element includes: a first semiconductor layer; an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer; a third semiconductor layer comprising a third-first semiconductor layer and a third-second semiconductor layer stacked on the second semiconductor layer, and a fourth semiconductor layer disposed on the third-second semiconductor layer. The third semiconductor layer is a tunneling junction layer. A sum of a thickness of the fourth semiconductor layer and the third-second semiconductor layer is different from a sum of a thickness of the second semiconductor layer and the third-first semiconductor layer.