Light Emitting Device Via with Charge Distribution Layer
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Solution Overview
Problem
Existing light emitting devices face challenges in optimizing the distribution of electric current and preventing current leakage, which affects their efficiency and performance.
Innovation Solution
A light emitting device structure is proposed with a conductive substrate, multiple conductive and semiconductor layers, an active layer, and a charge distribution layer, where the first conductive layer includes a via that penetrates through other layers and is electrically connected to the first semiconductor layer, and an insulation layer is formed between conductive layers and on the via's side wall, with the charge distribution layer having lower electrical conductivity than the first semiconductor layer to scatter electric current uniformly.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a via penetrates through multiple layers to connect conductive layers, then electrical connection is improved, but current leakage increases
Solution Approach 1:
The patent introduces a charge distribution layer as an intermediary between the first and second semiconductor layers. This layer is positioned at the bottom of the via and serves as a mediator to redistribute current flow, preventing direct current leakage paths while maintaining electrical connection through the via structure.
Solution Approach 2:
The charge distribution layer is selectively positioned only at the bottom of the via within the first semiconductor layer, creating a localized region with different electrical properties. This local modification allows current redistribution precisely where needed (at the via entrance) without affecting the overall device structure or requiring global changes.
2Reliability
If current is concentrated through the via, then electrical connection is improved, but current distribution uniformity deteriorates
Solution Approach 1:
The charge distribution layer acts as an intermediary that receives concentrated current from the via and redistributes it laterally into the first semiconductor layer. This mediation transforms the concentrated current path into a more uniform distribution pattern, improving current spread without compromising the via's electrical connection function.
Solution Approach 2:
The charge distribution layer enables current to transition from a one-dimensional vertical path (through the via) to a two-dimensional lateral distribution pattern within the first semiconductor layer. This dimensional transition allows current to spread out uniformly across the layer rather than remaining concentrated at the via location.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This structure enhances the uniform distribution of electric current and reduces current leakage, thereby improving the light emitting device's efficiency and performance.
Implementation Method 1
the charge distribution layer has an electrical conductivity lower than that of the first semiconductor layer
Implementation Method 2
the first conductive layer includes at least one via which penetrates the second conductive layer, the second semiconductor layer, the active layer and the charge distribution layer and projects into a the first semiconductor layer
Data Source
Figure 1~2
Figure 3a~3b
Figure 4~5
AI summary
A lighting emitting device that includes a conductive substrate (310); a first conductive layer (320) formed on the conductive substrate; a second conductive layer (330) formed on the first conductive layer; a second semiconductor layer (350) formed on the second conductive layer; an active layer (360) formed on the second semiconductor layer; a first semiconductor layer (340) being formed on the active layer and including a charge distribution layer (380); and an insulation layer (370). The first conductive layer includes at least one via (321) which penetrates through the second conductive layer, the second semiconductor layer, the active layer and charge distribution layer and projects into a certain area of the first semiconductor layer, and then is electrically connected to the first semiconductor layer. The insulation layer is formed between the first conductive layer and the second conductive layer and on the side wall of the via. The charge distribution layer has a doping concentration lower than that of the first semiconductor layer.