LED Chip Wire-Bond Layout for High Optical Power Density
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Solution Overview
Problem
The existing LED packaging technologies face challenges in reducing the gap between small chips while maintaining safe wire bonding distances, which limits the achievement of high optical power density.
Innovation Solution
The design includes a light emitting device with multiple light emitting units connected by wire bonding layers, where the spacing between adjacent units is reduced by strategically positioning the electrodes, ensuring the safe wire bonding distance is maintained, and the optical power density is enhanced.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If multiple small chips are connected in series to achieve high optical power density, then the optical power density is improved, but the gap between chips cannot be reduced due to safe wire bonding distance requirements
Solution Approach 1:
The patent transitions from planar wire bonding to three-dimensional bonding by positioning bonding pads at different heights (first bonding pad at first height, second bonding pad at second height). This vertical dimensionality change allows the bonding wire to connect chips at reduced horizontal gaps while maintaining safe bonding distances through the height difference, thereby enabling higher optical power density without compromising bonding safety.
Solution Approach 2:
The patent changes the spatial parameters of bonding pads by setting different heights for the first and second bonding pads. This parameter modification (height difference) allows the bonding wire to achieve adequate clearance and safety margins while reducing the horizontal gap between adjacent chips, thus resolving the contradiction between optical power density and chip spacing.
2Reliability
If the safe wire bonding distance is maintained at ≥150 μm, then the bonding safety is ensured, but the overall device size increases
Solution Approach 1:
By utilizing the vertical dimension to create height differences between bonding pads, the patent achieves adequate bonding safety margins without requiring increased horizontal spacing. This three-dimensional arrangement maintains bonding reliability while minimizing the overall device footprint.
Solution Approach 2:
The patent effectively nests the bonding wire path in three-dimensional space, allowing the wire to traverse vertical height differences to achieve safe bonding distances while maintaining compact horizontal chip arrangement, thus reducing overall device volume while ensuring bonding safety.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces the spacing between light emitting units, achieving high optical power density and minimizing the overall size of the device, thereby meeting market demands for high optical power density while ensuring safety.
Implementation Method 1
The plurality of light emitting units are electrically connected to each other through the plurality of wire bonding layers
Implementation Method 2
Under forward voltage, electrons are injected from the N region into the P region, and holes are injected from the P region into the N region. Some of the charge carriers recombine with majority carriers to emit light.
Data Source
AI summary
The disclosure provides a light emitting device including a plurality of light emitting units and a plurality of wire bonding layers, each light emitting unit includes a first electrode and second electrode, the first electrode and the second electrode are spaced apart from each other, and the electrical properties of the first electrode and the second electrode are different. Multiple light emitting units are electrically connected to each other through multiple wire bonding layers, in which the spacing between two adjacent light emitting units is 0.5 μm to 50 μm, and the length of each wire bonding layer projected onto the light emitting unit is greater than or equal to 150 μm.