Light Emitting Device Wiring Architecture

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Solution Overview

Problem

The manufacturing process of semiconductor light emitting elements with multiple layers on a substrate becomes complicated due to the need for intersecting wiring connections with n-type and p-type semiconductor layers, restricting material choices and increasing process complexity.

Innovation Solution

A method involving a wafer with supporting substrate and multiple light emitting structures arranged in rows and columns, where insulating layers and electrically-conductive structures are formed to connect the semiconductor layers, reducing the complexity of wiring intersections and allowing for efficient electrical connections.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If wirings are arranged to intersect with each other to connect n-type and p-type semiconductor layers, then electrical connections are achieved, but manufacturing process complexity increases

Engineering Contradiction:
Improveelectrical connectionVSAvoidmanufacturing process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent transitions from planar intersecting wirings to a three-dimensional stacked architecture where wirings are arranged in different layers (first wiring layer, second wiring layer) separated by insulating layers. This dimensional separation eliminates the need for wirings to intersect on the same plane, thereby simplifying the manufacturing process while maintaining electrical connectivity between n-type and p-type semiconductor layers through vertical connections.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Device complexity

If stripe-shaped electrode layers are used to avoid intersection, then wiring complexity is reduced, but material selection is restricted

Engineering Contradiction:
Improvewiring arrangementVSAvoidmaterial selection
Core Design Contradiction:
Device complexityVSAdaptability or versatility

Solution Approach 1:

The patent divides the wiring system into multiple independent wiring layers (first wiring layer and second wiring layer) separated by insulating layers. Each wiring layer can be independently designed and manufactured, allowing for greater flexibility in material selection for each layer without being constrained by the need to grow semiconductor layers on electrode patterns. This segmentation enables broader material choices while maintaining simplified wiring architecture.

Inventive Principle:
Principle #1Segmentation

3Device complexity

If multiple wiring layers with insulating layers are formed, then wiring intersection is avoided, but manufacturing steps increase

Engineering Contradiction:
Improvewiring intersectionVSAvoidmanufacturing steps
Core Design Contradiction:
Device complexityVSEase of manufacture

Solution Approach 1:

The patent forms insulating layers between wiring layers during the manufacturing process, creating a prepared substrate structure before final wiring connections are established. This preliminary formation of insulating barriers enables subsequent wiring layers to be deposited without requiring complex planarization or rework, thereby reducing the overall number of manufacturing steps despite the multi-layer wiring architecture.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS10658423B2Method of manufacturing light emitting device
Publication Date: 2020.05.19 NICHIA CORP
  • US10658423B2 patent drawing
  • US10658423B2 patent drawing
  • US10658423B2 patent drawing

AI summary

A method of manufacturing a light emitting device includes: providing a wafer that comprises: a supporting substrate, and a plurality of light emitting structures arranged in a two-dimensional array on a first principal surface of the supporting substrate along a first direction and a second direction, each of the plurality of light emitting structures comprising a first semiconductor layer, which includes a first region and a second region, and a second semiconductor layer, which covers the second region of the first semiconductor layer, wherein the plurality of light emitting structures includes a first light emitting structure and a second light emitting structure; forming a recess in the first principal surface of the supporting substrate between the first light emitting structure and the second light emitting structure; forming a resin layer in the recess; and removing the supporting substrate so as to expose the first semiconductor layer.