Lens-Shaped Semiconductor Layer for Wider-Angle Display Emission

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Solution Overview

Problem

Existing display devices face challenges in optimizing light emission and viewing angles without the need for separate lens structures, which complicates manufacturing and requires consideration of additional materials' properties.

Innovation Solution

The display device integrates a light-emitting element with a second semiconductor layer having a lens-shaped upper surface, aligning side surfaces with an active layer, and includes a common electrode, eliminating the need for a separate lens structure by forming the lens shape directly on the semiconductor layer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Illumination intensity

If a separate lens structure is added to optimize light emission and viewing angles, then light emission efficiency is improved, but device complexity increases

Engineering Contradiction:
Improvelight emission efficiencyVSAvoiddevice complexity
Core Design Contradiction:
Illumination intensityVSDevice complexity

Solution Approach 1:

The patent merges the lens function with the second semiconductor layer by forming a lens-shaped upper surface directly on the semiconductor layer. This integration eliminates the need for a separate lens structure, thereby maintaining light emission optimization while reducing device complexity. The lens shape is formed concurrently with the semiconductor layer fabrication process, combining structural and optical functions in a single component.

Inventive Principle:
Principle #5Merging (Combining)

2Illumination intensity

If a separate lens structure is added to optimize light emission, then viewing angle control is improved, but manufacturing complexity increases

Engineering Contradiction:
Improveviewing angle controlVSAvoidmanufacturing complexity
Core Design Contradiction:
Illumination intensityVSEase of manufacture

Solution Approach 1:

The lens structure is merged with the second semiconductor layer, allowing viewing angle control to be achieved during the semiconductor layer fabrication process. The lens-shaped upper surface is formed using the same epitaxial growth and etching processes, eliminating the need for separate lens manufacturing and assembly steps.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The lens shape is preliminarily formed on the second semiconductor layer during the epitaxial growth stage, before device assembly. The lens-shaped upper surface is created by controlling the etching depth to expose the second semiconductor layer at a specific height, preparing the optical structure in advance and simplifying subsequent manufacturing steps.

Inventive Principle:
Principle #10Preliminary action

3Illumination intensity

If a separate lens structure is added, then light emission optimization is achieved, but material considerations become more complex

Engineering Contradiction:
Improvelight emission optimizationVSAvoidmaterial considerations
Core Design Contradiction:
Illumination intensityVSDevice complexity

Solution Approach 1:

The patent uses the same semiconductor material for both the lens structure and the light-emitting layer, ensuring homogeneous material properties throughout. The second semiconductor layer serves dual functions as both the electrical contact layer and the lens structure, eliminating the need to consider refractive index matching and material compatibility between different materials.

Inventive Principle:
Principle #33Homogeneity

Data Source

PatentUS20250221116A1Display device and method for manufacturing of the display device
Publication Date: 2025.07.03 SAMSUNG DISPLAY CO LTD
  • US20250221116A1 patent drawing
  • US20250221116A1 patent drawing
  • US20250221116A1 patent drawing

AI summary

The display device includes a substrate, a light-emitting element above the substrate, and including a first semiconductor layer, an active layer, and a second semiconductor layer having a lens-shaped upper surface that is further away from the active layer, and a common electrode above the light-emitting element, wherein side surfaces of the active layer and the second semiconductor layer are aligned.